High-performance temperature sensor based on 4H-SiC Schottky diodes
S Rao, G Pangallo, F Pezzimenti… - IEEE Electron Device …, 2015 - ieeexplore.ieee.org
A high-performance temperature sensor based on coupled 4H-SiC Schottky diodes is
presented. The linear dependence on temperature of the difference between the forward …
presented. The linear dependence on temperature of the difference between the forward …
85–440 K temperature sensor based on a 4H-SiC Schottky diode
The performance of a 4H-SiC Schottky diode for thermal sensing in the wide temperature
range from T= 85 up to 443 K is presented. The linear dependence on temperature of the …
range from T= 85 up to 443 K is presented. The linear dependence on temperature of the …
[HTML][HTML] A 4H-SiC CMOS oscillator-based temperature sensor operating from 298 K up to 573 K
N Rinaldi, R Liguori, A May, C Rossi, M Rommel… - Sensors, 2023 - mdpi.com
In this paper, we propose a temperature sensor based on a 4H-SiC CMOS oscillator circuit
and that is able to operate in the temperature range between 298 K and 573 K. The circuit is …
and that is able to operate in the temperature range between 298 K and 573 K. The circuit is …
Analytical model and design of 4H-SiC planar and trenched JBS diodes
An analytical instrument to design 4H-SiC planar and trenched junction barrier Schottky
(JBS) diodes is proposed. The tool is based on a novel full analytical description of the …
(JBS) diodes is proposed. The tool is based on a novel full analytical description of the …
High-performance temperature sensors based on dual 4H-SiC JBS and SBD devices
Schottky diode-based temperature sensors are the most common commercially available
temperature sensors, and they are attracting increasing interest owing to their higher …
temperature sensors, and they are attracting increasing interest owing to their higher …
Analytical model of the forward operation of 4H-SiC vertical DMOSFET in the safe operating temperature range
GD Licciardo, S Bellone… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
A new analytical model of 4H-SiC DMOSFETs that is useful to explore their thermal stability
is presented. The model is capable to describe, with closed-form equations, the dc forward …
is presented. The model is capable to describe, with closed-form equations, the dc forward …
Optimized design for 4h-sic power dmosfet
An optimized tradeoff between blocking voltage and specific ON-resistance for 4H-silicon
carbide power vertical double-implanted metal-oxide-semiconductor field-effect transistor …
carbide power vertical double-implanted metal-oxide-semiconductor field-effect transistor …
A model of the off-behaviour of 4H–SiC power JFETs
A physical model of the off-behaviour of Vertical Junction Field Effect Transistors (VJFETs)
up to their blocking voltage limit is presented. Since the drain current, ID, of these devices …
up to their blocking voltage limit is presented. Since the drain current, ID, of these devices …
Experimental results on lateral 4H-SiC UV photodiodes
In this paper we report the experimental results of lateral 4H-SiC UV pin photodiodes, whose
p-type anode and n-type cathode regions are made by Aluminum and Nitrogen …
p-type anode and n-type cathode regions are made by Aluminum and Nitrogen …
Analysis of the performances of a fully 4H-SiC insultated DC/AC converters
A complex power converter system is realized with only 4H-SiC devices. It is a DC/AC power
converter with an isolation of 4kVdc and made by two stages: a DC/DC Phase Shift Full …
converter with an isolation of 4kVdc and made by two stages: a DC/DC Phase Shift Full …