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Thermal stress and temperature distribution of an annular fin with variable temperature-dependent thermal properties and magnetic field using DTM-Pade …
The thermal distribution within a rectangular profiled annular fin in the presence of a
magnetic field and internal heat generation is examined in the present inspection …
magnetic field and internal heat generation is examined in the present inspection …
Short-circuit study in medium-voltage GaN cascodes, p-GaN HEMTs, and GaN MISHEMTs
This paper studies by experimentation and physics-based simulation the Short-Circuit (SC)
capability of several normally-off 600-650 V Gallium Nitride High-Electron-Mobility …
capability of several normally-off 600-650 V Gallium Nitride High-Electron-Mobility …
[HTML][HTML] Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers
This letter reports the implementation of double-drift-layer (DDL) design into GaN vertical
Schottky barrier diodes (SBDs) grown on free-standing GaN substrates. This design …
Schottky barrier diodes (SBDs) grown on free-standing GaN substrates. This design …
[HTML][HTML] Thermal distribution through a moving longitudinal trapezoidal fin with variable temperature-dependent thermal properties using DTM-Pade approximant
MC Jayaprakash, HAH Alzahrani, G Sowmya… - Case Studies in Thermal …, 2021 - Elsevier
The present inspection elaborates the thermal distribution through a convective-radiative
longitudinal trapezoidal moving fin with an internal heat source by considering the linear …
longitudinal trapezoidal moving fin with an internal heat source by considering the linear …
Thermal management of GaN-on-Si high electron mobility transistor by copper filled micro-trench structure
Self-heating effect is a major limitation in achieving the full performance potential of high
power GaN power devices. In this work, we reported a micro-trench structure fabricated on …
power GaN power devices. In this work, we reported a micro-trench structure fabricated on …
Self-heating and equivalent channel temperature in short gate length GaN HEMTs
In this paper, we study the self-heating mechanism and its impact on electrical performance
of short gate length GaN high electron mobility transistors (HEMTs) based on electrothermal …
of short gate length GaN high electron mobility transistors (HEMTs) based on electrothermal …
Iterative solutions for the nonlinear heat transfer equation of a convective-radiative annular fin with power law temperature-dependent thermal properties
The temperature distribution in a conductive-radiative rectangular profiled annular fin with
internal heat generation is scrutinized in the present investigation. The nonlinear variation of …
internal heat generation is scrutinized in the present investigation. The nonlinear variation of …
An evolutionary multilayer perceptron-based large-signal model of GaN HEMTs including self-heating and trap** effects
Neural networks are widely used to build large-signal models; an appropriate network
architecture is important for high model accuracy and good generalization ability. In this …
architecture is important for high model accuracy and good generalization ability. In this …
P-GaN HEMTs drain and gate current analysis under short-circuit
Gallium Nitride High-Electron-Mobility Transistors (GaN HEMTs) are promising devices for
high-frequency and high-power density converters, but some of their applications (eg, motor …
high-frequency and high-power density converters, but some of their applications (eg, motor …
High-resolution AlGaN/GaN HEMT-based electrochemical sensor for biomedical applications
We have investigated the characteristics of pH and salinity sensor derived from the gated
AlGaN/GaN highelectron mobility transistor (HEMT) structures in phosphate buffer saline …
AlGaN/GaN highelectron mobility transistor (HEMT) structures in phosphate buffer saline …