A comprehensive review of Single Event Transients on various MOS devices
PS Rajakumar, SS Kumar - IEEE Access, 2024 - ieeexplore.ieee.org
Due to the constant scaling of device sizes and the arrival of nanoscale technologies, Single-
Event Transients (SETs) are becoming an increasingly important problem in the design and …
Event Transients (SETs) are becoming an increasingly important problem in the design and …
Radiation Hardness Study of LG = 20 nm FinFET and Nanowire SRAM Through TCAD Simulation
A Elwailly, J Saltin, MJ Gadlage… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
Radiation hardness of FinFET and stacked nanowire (NW) static random-access memory
(SRAM), with LG= 20 nm, which corresponds to high-density 5 nm technology node, is …
(SRAM), with LG= 20 nm, which corresponds to high-density 5 nm technology node, is …
Radiation sensor design for mitigation of total ionizing dose effects
The electrical breakdown of oxides and oxide/semiconductor interfaces is one of the major
reasons for failure of CMOS ICs, especially when they are exposed to high stress conditions …
reasons for failure of CMOS ICs, especially when they are exposed to high stress conditions …
An analytical model of single-event transients in double-gate MOSFET for circuit simulation
In this paper, a physics-based bias-dependent model of single-event transients (SETs) in
double-gate (DG) MOSFET suitable for circuit simulation is presented. The existing …
double-gate (DG) MOSFET suitable for circuit simulation is presented. The existing …
Designing and Reliability analysis of radiation hardened Stacked gate Junctionless FinFET and CMOS Inverter
Along with radiation sensing, necessity to study and design reliable radiation hardened
devices is also increasing now-a-days. These devices are tolerant to high dosage of …
devices is also increasing now-a-days. These devices are tolerant to high dosage of …
[HTML][HTML] Radiation effects on multi-channel Forksheet-FET and Nanosheet-FET considering the bottom dielectric isolation scheme
G Choi, J Jeon - Nuclear Engineering and Technology, 2024 - Elsevier
This study analyzes the single-event transient (SET) characteristics of alpha particles on
multi-channel Forksheet-FET and Nanosheet-FET at the device and circuit levels through 3D …
multi-channel Forksheet-FET and Nanosheet-FET at the device and circuit levels through 3D …
Investigation of single-event-transient effects induced by heavy-ion in all-silicon DG-TFET
The heavy-ion analysis is a single-event-effect (SEE) that produces a single-event-transient
(SET) pulse of current. In this work, the analysis was done to observe the maximum impact of …
(SET) pulse of current. In this work, the analysis was done to observe the maximum impact of …
Single event transients in sub-10nm SOI MuGFETs due to heavy-ion irradiation
We compare and report in this work heavy-ion irradiation induced single event transients
(SETs) in sub-10nm node SOI multiple gate FETs with the help of calibrated 3-D TCAD …
(SETs) in sub-10nm node SOI multiple gate FETs with the help of calibrated 3-D TCAD …
Heavy ions and alpha particles irradiation impact on III-V broken-gap gate-all-around TFET
This report deals with the impact of radiation on III-V and Si gate-all-around tunnel field effect
transistors (GAA TFET). The highly energetic particles (HEPs) such as heavy ions and alpha …
transistors (GAA TFET). The highly energetic particles (HEPs) such as heavy ions and alpha …
Performance Analysis of Sub 10 nm Double Gate Circular MOSFET
In this work, TCAD based investigation of various Circular double gate MOSFET (CDGT)
architectures have been carried for Low-Power (LP) & High-Performance (HP) applications …
architectures have been carried for Low-Power (LP) & High-Performance (HP) applications …