Semiconductor nanowires have recently emerged as a new class of materials with
significant potential to reveal new fundamental physics and to propel new applications in …

Nanowires are natural one-dimensional channels and offer new opportunities for advanced
electronic quantum transport experiments. We review recent progress on the synthesis of …

Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …

We report the use of Te as an n-type dopant in GaAs core− shell pn junction nanowires for
use in photovoltaic devices. Te produced significant change in the morphology of GaAs …

Theoretical model for the growth of semiconductor nanowires is developed, which enables
one to determine the growth conditions under which the formation of nanowires is possible …

We develop a quantitative model of the self-catalyzed vapor-liquid-solid growth of GaAs
nanowires, that depends on only a few a priori unknown physical parameters. The model is …

We report on the Au-free molecular beam epitaxy growth of coherent GaAs nanowires
directly on Si (111) substrates. The growth is catalyzed by liquid Ga droplets formed in the …

Recent results of studying the semiconductor's whisker nanocrystals are reviewed. Physical
grounds of growing whisker nanocrystals using the mechanism vapor-liquid-crystal are …

Nanowire (NW) crystal growth via the vapour–liquid–solid mechanism is a complex dynamic
process involving interactions between many atoms of various thermodynamic states. With …

The growth of wurtzite GaAs and InAs nanowires with diameters of a few tens of nanometers
with negligible intermixing of zinc blende stacking is reported. The suppression of the …