A simple analytical model that describes MOSFET operation in saturation from subthreshold
to strong inversion is used to derive a new formulation of the intrinsic switching delay of the …

2. Description of the Related Art Strained silicon is being used by the semiconductor indus
try to improve transistor performance. Increased Strain levels are desired in future …

In this paper, an in-depth variability analysis, ie, from the threshold voltage VT of metal-oxide-
semiconductor field-effect-transistors (MOSFETs) to the static noise margin (SNM) of static …

Negative bias temperature instability (NBTI) is a major degradation mechanism of PMOSFET
devices. When the p-channel field effect transistor (PFET) gate is biased negatively with …

We report the demonstration of a novel strained silicon-on-insulator N-MOSFET featuring
silicon-carbon (Si 1-y C y) source and drain (S/D) regions, tantalum nitride metal gate, and …

(cont) While III-V semiconductors are seriously limited by their small quantization effective
mass, which limits the available inversion charge at a given voltage overdrive, germanium is …

2. Description of the Related Art Epitaxially grown SiGe channels are being used to tune
threshold voltages of p-type metal oxide semiconductor field effect transistors (PMOSFETs) …

La course à la miniaturisation des transistors MOS (Métal Oxyde Semiconducteur) implique
l'utilisation de nouvelles technologies d'amélioration des performances. Notamment …

Le travail d'une thèse n'est pas quelque chose qui peut se faire seul et isolé des autres.
Comme toute étude de cette envergure, sa réussite est avant tout la réussite d'un groupe et …

(57) ABSTRACT A semiconductor device and method for fabricating a semi conductor
device include providing a strained semiconductor layer having a first strained axis, forming …