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An ultra-deep TSV technique enabled by the dual catalysis-based electroless plating of combined barrier and seed layers
Silicon interposers embedded with ultra-deep through-silicon vias (TSVs) are in great
demand for the heterogeneous integration and packaging of opto-electronic chiplets and …
demand for the heterogeneous integration and packaging of opto-electronic chiplets and …
[HTML][HTML] Fabrication and electrical characterization of high aspect ratio through-silicon vias with polyimide liner for 3D integration
X Chen, Z Chen, L **ao, Y Hao, H Wang, Y Ding… - Micromachines, 2022 - mdpi.com
High aspect ratio (HAR) through-silicon vias (TSVs) are in urgent need to achieve smaller
keep-out zones (KOZs) and higher integration density for the miniaturization of high …
keep-out zones (KOZs) and higher integration density for the miniaturization of high …
Comparative evaluations on scallop-induced electric-thermo-mechanical reliability of through-silicon-vias
Z Cheng, Y Ding, L **ao, X Wang, Z Chen - Microelectronics Reliability, 2019 - Elsevier
Sidewall scallops of through-silicon-vias (TSVs) formed during the Bosch etching process
will bring serious challenges to TSV reliability. In this paper, the impact of sidewall scallops …
will bring serious challenges to TSV reliability. In this paper, the impact of sidewall scallops …
Fabrication and high-frequency characterization of low-cost fan-in/out WLP technology with RDL for 2.5 D/3D heterogeneous integration
Redistribution layer (RDL) and through silicon via (TSV) are the two main important
packaging methods of the heterogeneous integration, here we report on the interconnection …
packaging methods of the heterogeneous integration, here we report on the interconnection …
Elimination of scallop-induced stress fluctuation on through-silicon-vias (TSVs) by employing polyimide liner
3-D modeling of through-silicon-via (TSV) with sidewall scallops, combined with an element
birth and death technique, is explored in finite-element analysis (FEA) in this paper to …
birth and death technique, is explored in finite-element analysis (FEA) in this paper to …
Low capacitance and highly reliable blind through-silicon-vias (TSVs) with vacuum-assisted spin coating of polyimide dielectric liners
Low-k and high aspect ratio blind through-silicon-vias (TSVs) to be applied in “via-
last/backside via” 3-D integration paradigm were fabricated with polyimide dielectric liners …
last/backside via” 3-D integration paradigm were fabricated with polyimide dielectric liners …
Electrical characteristics and thermal reliability of blind through-silicon-vias with polyimide liners
Blind through-silicon-vias (TSVs) with low cost polyimide dielectric liner formed by vacuum-
assisted spin coating technique were successfully fabricated, and capacitance-voltage …
assisted spin coating technique were successfully fabricated, and capacitance-voltage …
Low cost polyimide liner formation with vacuum-assisted spin coating for through-silicon-vias
Three-dimensional (3-D) integration with through-silicon-vias (TSVs) has been laid high
expectations in overcoming further miniaturization obstacles faced by conventional 2-D …
expectations in overcoming further miniaturization obstacles faced by conventional 2-D …
In-Depth Study of 3D Color-Resist Coating Process for Optically Uniform Image Sensors
The color filter required for manufacturing a CMOS image sensor was redeveloped to
optimize its optical uniformity. An in-depth study of the three-dimensional (3D) coating …
optimize its optical uniformity. An in-depth study of the three-dimensional (3D) coating …