An ultra-deep TSV technique enabled by the dual catalysis-based electroless plating of combined barrier and seed layers

Y Su, Y Ding, L **ao, Z Zhang, Y Yan, Z Liu… - Microsystems & …, 2024 - nature.com
Silicon interposers embedded with ultra-deep through-silicon vias (TSVs) are in great
demand for the heterogeneous integration and packaging of opto-electronic chiplets and …

[HTML][HTML] Fabrication and electrical characterization of high aspect ratio through-silicon vias with polyimide liner for 3D integration

X Chen, Z Chen, L **ao, Y Hao, H Wang, Y Ding… - Micromachines, 2022 - mdpi.com
High aspect ratio (HAR) through-silicon vias (TSVs) are in urgent need to achieve smaller
keep-out zones (KOZs) and higher integration density for the miniaturization of high …

Comparative evaluations on scallop-induced electric-thermo-mechanical reliability of through-silicon-vias

Z Cheng, Y Ding, L **ao, X Wang, Z Chen - Microelectronics Reliability, 2019 - Elsevier
Sidewall scallops of through-silicon-vias (TSVs) formed during the Bosch etching process
will bring serious challenges to TSV reliability. In this paper, the impact of sidewall scallops …

Fabrication and high-frequency characterization of low-cost fan-in/out WLP technology with RDL for 2.5 D/3D heterogeneous integration

J Xu, Y Sun, J Liu, YD Wei, WS Zhao, DW Wang - Microelectronics Journal, 2022 - Elsevier
Redistribution layer (RDL) and through silicon via (TSV) are the two main important
packaging methods of the heterogeneous integration, here we report on the interconnection …

Elimination of scallop-induced stress fluctuation on through-silicon-vias (TSVs) by employing polyimide liner

C Xue, Z Cheng, Z Chen, Y Yan, Z Cai… - IEEE transactions on …, 2018 - ieeexplore.ieee.org
3-D modeling of through-silicon-via (TSV) with sidewall scallops, combined with an element
birth and death technique, is explored in finite-element analysis (FEA) in this paper to …

Low capacitance and highly reliable blind through-silicon-vias (TSVs) with vacuum-assisted spin coating of polyimide dielectric liners

YY Yan, M **ong, B Liu, YT Ding, ZM Chen - Science China Technological …, 2016 - Springer
Low-k and high aspect ratio blind through-silicon-vias (TSVs) to be applied in “via-
last/backside via” 3-D integration paradigm were fabricated with polyimide dielectric liners …

Electrical characteristics and thermal reliability of blind through-silicon-vias with polyimide liners

B Liu, Y Yan, Z Zhang, Z Chen… - 2016 17th International …, 2016 - ieeexplore.ieee.org
Blind through-silicon-vias (TSVs) with low cost polyimide dielectric liner formed by vacuum-
assisted spin coating technique were successfully fabricated, and capacitance-voltage …

半導体ウエハへの三次元配線加工: TSV と狭ピッチ電極を中心に

福島誉史, **康旭, 田中徹, 小柳光** - 表面技術, 2016 - jstage.jst.go.jp
の貫通電極を意味した古くから使用されている用語であり, この由来からも想像できる通り, TSV
はパッケージング技術であるとの認識が当時は高かった. そのため, TSV に関しても, 直径 50~ 70 …

Low cost polyimide liner formation with vacuum-assisted spin coating for through-silicon-vias

Y Yan, Z Zhang, Z Cheng, L Zhou… - … IEEE International 3D …, 2016 - ieeexplore.ieee.org
Three-dimensional (3-D) integration with through-silicon-vias (TSVs) has been laid high
expectations in overcoming further miniaturization obstacles faced by conventional 2-D …

In-Depth Study of 3D Color-Resist Coating Process for Optically Uniform Image Sensors

S Kim, J Yoo, H Choi, J Seo, S Lee, SM Won… - IEEE …, 2021 - ieeexplore.ieee.org
The color filter required for manufacturing a CMOS image sensor was redeveloped to
optimize its optical uniformity. An in-depth study of the three-dimensional (3D) coating …