Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical …
In order to handle high power with good thermal stability at RF & microwave frequencies
wider bandgap semiconductor based transistors are highly desirable and GaN & AlGaN …
wider bandgap semiconductor based transistors are highly desirable and GaN & AlGaN …
GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices
N Wu, Z ** effects in AlGaN/GaN HEMTs
R Ye, X Cai, C Du, H Liu, Y Zhang, X Duan… - IEEE Access, 2021 - ieeexplore.ieee.org
Due to the excellent material characteristics, AlGaN/GaN HEMTs are widely used in high
power and high frequency applications. However, the existence of damages, defects and …
power and high frequency applications. However, the existence of damages, defects and …
Molecular Beam Epitaxy of Group‐III Nitrides on Silicon Substrates: Growth, Properties and Device Applications
We report on the growth and properties of GaN films grown on Si (111) substrates by
molecular beam epitaxy using ammonia. The properties of the layers show that our growth …
molecular beam epitaxy using ammonia. The properties of the layers show that our growth …
Nonlinear device model of microwave power GaN HEMTs for high power-amplifier design
This paper presents a nonlinear equivalent circuit model of microwave power GaN high
electron-mobility transistors (HEMTs), amenable for integration into commercial harmonic …
electron-mobility transistors (HEMTs), amenable for integration into commercial harmonic …
Gallium nitride material devices including an electrode-defining layer and methods of forming the same
Gallium nitride material devices and methods of forming the same are provided. The devices
include an electrode-defining layer. The electrode-defining layer typically has a via formed …
include an electrode-defining layer. The electrode-defining layer typically has a via formed …
A review of direct drive proportional electrohydraulic spool valves: industrial state-of-the-art and research advancements
This paper reviews the state of the art of directly driven proportional directional hydraulic
spool valves, which are widely used hydraulic components in the industrial and …
spool valves, which are widely used hydraulic components in the industrial and …
Transistor modeling: Robust small-signal equivalent circuit extraction in various HEMT technologies
AR Alt, D Marti, CR Bolognesi - IEEE microwave magazine, 2013 - ieeexplore.ieee.org
Small-signal equivalent circuit (SSEC) models prove indispensable to a broad range of
activities, ranging from the understanding of device physics, the analysis of device …
activities, ranging from the understanding of device physics, the analysis of device …