Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies
Abstract Gallium oxide (Ga2O3) is an emerging ultra‐wide bandgap (UWBG) semiconductor
material that has gained significant attention in the field of high voltage and high frequency …
material that has gained significant attention in the field of high voltage and high frequency …
10-kV Lateral β-Ga₂O₃ MESFETs With B Ion Implanted Planar Isolation
H Liu, Y Wang, Y Lv, S Han, T Han… - IEEE Electron …, 2023 - ieeexplore.ieee.org
In the letter, high performance lateral-Ga 2 O 3 metal-semiconductor field effect transistors
(MESFETs) with ultra-high breakdown voltage (over 10 kV are demonstrated. Planar …
(MESFETs) with ultra-high breakdown voltage (over 10 kV are demonstrated. Planar …
Ultra-low reverse leakage in large area kilo-volt class β-Ga2O3 trench Schottky barrier diode with high-k dielectric RESURF
We introduce vertical Schottky barrier diodes (SBDs) based on β-Ga 2 O 3 with trench
architecture, featuring a high-permittivity dielectric RESURF structure. These diodes are …
architecture, featuring a high-permittivity dielectric RESURF structure. These diodes are …
200 cm2/Vs electron mobility and controlled low 1015 cm− 3 Si do** in (010) β-Ga2O3 epitaxial drift layers
We report on metalorganic chemical vapor deposition (MOCVD) growth of controllably Si-
doped 4.5 μm thick β-Ga 2 O 3 films with electron concentrations in the 10 15 cm− 3 range …
doped 4.5 μm thick β-Ga 2 O 3 films with electron concentrations in the 10 15 cm− 3 range …
Demonstration of the β-Ga₂O₃ MOS-JFETs With Suppressed Gate Leakage Current and Large Gate Swing
In this work, we have achieved novel lateral enhancement-mode (EM) and depletion-mode
(DM)-Ga2O3 metal-oxide-semiconductor junction field-effect-transistors (MOS-JFETs) …
(DM)-Ga2O3 metal-oxide-semiconductor junction field-effect-transistors (MOS-JFETs) …
Demonstration of the normally off β-Ga2O3 MOSFET with high threshold voltage and high current density
Y Cai, Z Feng, Z Wang, X Song, Z Hu, X Tian… - Applied Physics …, 2023 - pubs.aip.org
In this work, we demonstrated the enhancement mode (E-mode) β-Ga 2 O 3 metal–oxide–
semiconductor field-effect transistor (MOSFET) by introducing a hybrid floating gate (HFG) …
semiconductor field-effect transistor (MOSFET) by introducing a hybrid floating gate (HFG) …