Power amplifier for amplifying high-frequency (HF) signals
M Berroth, L Wu - US Patent 7,551,036, 2009 - Google Patents
An HF power amplifier is disclosed having a plurality of branches (10, 11, 12) switched in
parallel. Each branch com prises a plurality of amplifier elements (T1, T4) switched in series …
parallel. Each branch com prises a plurality of amplifier elements (T1, T4) switched in series …
UHiFET-A new high-frequency High-Voltage device
AK Ezzeddine, HC Huang… - 2011 IEEE MTT-S …, 2011 - ieeexplore.ieee.org
The HiFET (High-Impedance, High-Voltage FET) configuration is used to connect several
semiconductor FETs both DC and RF in series, resulting in high DC bias voltage and high …
semiconductor FETs both DC and RF in series, resulting in high DC bias voltage and high …
A fully integrated 2.4 GHz CMOS high power amplifier using parallel class A&B power amplifier and power-combining transformer for WiMAX application
AR Belabad, N Masoumi, SJ Ashtiani - AEU-International Journal of …, 2013 - Elsevier
A new structure integrated power amplifier with watt-level output power is presented in a
standard 0.18 μm CMOS process for WiMAX applications. A parallel cascode class A&B …
standard 0.18 μm CMOS process for WiMAX applications. A parallel cascode class A&B …
A 900-MHz 29.5-dBm 0.13-μm CMOS HiVP power amplifier
L Wu, I Dettmann, M Berroth - IEEE transactions on microwave …, 2008 - ieeexplore.ieee.org
Using ST 0.13-mum CMOS technology, a class A power amplifier has been developed for
the global system for mobile communication in Europe. To solve the problem of low …
the global system for mobile communication in Europe. To solve the problem of low …
Bipolar stacked transistor architecture
A Darwish, M Zaghloul - US Patent 8,791,759, 2014 - Google Patents
The present invention relates to a transistor architecture and simulation technique for
optimizing the transistor archi tecture. More particularly, the present invention is for an …
optimizing the transistor archi tecture. More particularly, the present invention is for an …
A 2.4 GHz SiGe HBT high voltage/high power amplifier
Two-and three-stage high voltage/high power (HiVP) amplifiers have been designed,
implemented, and measured using a 0.12¿ m SiGe HBT process. The HiVP is a circuit …
implemented, and measured using a 0.12¿ m SiGe HBT process. The HiVP is a circuit …
Amplifier stage
HP Koerner - US Patent 7,911,280, 2011 - Google Patents
US7911280B2 - Amplifier stage - Google Patents US7911280B2 - Amplifier stage - Google
Patents Amplifier stage Download PDF Info Publication number US7911280B2 US7911280B2 …
Patents Amplifier stage Download PDF Info Publication number US7911280B2 US7911280B2 …
Multi-octave GaN MMIC amplifier
AM Darwish, HA Hung, E Viveiros… - 2010 IEEE MTT-S …, 2010 - ieeexplore.ieee.org
A broadband multi-octave, 0.1-20 GHz, 10 dB±2 dB amplifier was implemented in the
GaN/SiC technology. The amplifier design relies on a series DC/RF HEMTs (SHEMTS) …
GaN/SiC technology. The amplifier design relies on a series DC/RF HEMTs (SHEMTS) …
A broadband stacked power amplifier using 2-µm GaAs HBT process for C-band applications
CC Shen, FH Huang, CK Lin, HY Chang… - 2008 Asia-Pacific …, 2008 - ieeexplore.ieee.org
A broadband stacked power amplifier using 2-mum GaAs HBT process is presented in this
paper for C-band applications. The PA is designed based on a dual-stacked circuit topology …
paper for C-band applications. The PA is designed based on a dual-stacked circuit topology …
A 2‐GHz fully‐differential CMOS power amplifier with virtual grounds to suppress ground bounce
T Yan, H Liao, C Li, R Huang - Microwave and Optical …, 2007 - Wiley Online Library
This article presents a 2‐GHz fully‐differential CMOS power amplifier (PA) fabricated in a
standard 0.35‐μm RF CMOS process. Virtual grounds are introduced at both drive‐stage …
standard 0.35‐μm RF CMOS process. Virtual grounds are introduced at both drive‐stage …