Synthesis, electrical and photo-sensing characteristics of the Al/(PCBM/NiO: ZnO)/p-Si nanocomposite structures
In this study, metal-oxide (NiO: ZnO) nanocomposites mixed with different weight-
percentages (2, 10, 20% NiO) content were coated on the p-Si wafer via spin-coating …
percentages (2, 10, 20% NiO) content were coated on the p-Si wafer via spin-coating …
[HTML][HTML] Advances in Schottky parameter extraction and applications
P Wangyang, X Huang, XL Shi, N Zhang, Y Ye… - Journal of Materials …, 2024 - Elsevier
Schottky contacts have attracted widespread attention from both the electronic device
industry and researchers since their discovery. The Schottky characteristics make these …
industry and researchers since their discovery. The Schottky characteristics make these …
A detailed comparative study on electrical and photovoltaic characteristics of Al/p-Si photodiodes with coumarin-doped PVA interfacial layer: the effect of do** …
In this study, three different poly (vinyl alcohol)(PVA) films doped with weight percentages of
0.05, 0.10 and 0.20 coumarin were coated on p-Si wafer via spin-coating method for the …
0.05, 0.10 and 0.20 coumarin were coated on p-Si wafer via spin-coating method for the …
Superior role of V2O5 and yttrium interface layers in enhancing MIS radical photodiode performance
In this study, Cu/n-Si Schottky diodes with V 2 O 5–Y insulating interface layer were
designed for the fabrication of metal/insulator/semiconductor (MIS) structures. The effects of …
designed for the fabrication of metal/insulator/semiconductor (MIS) structures. The effects of …
Frequency and voltage dependence of barrier height, surface states, and series resistance in Al/Al2O3/p-Si structures in wide range frequency and voltage
Abstract In this study, Al/Al 2 O 3/p-Si (MIS) type structures were fabricated and then the
effects of Al 2 O 3 interlayer on the electrical characteristics have been investigated at room …
effects of Al 2 O 3 interlayer on the electrical characteristics have been investigated at room …
On the conduction mechanisms of Au/(Cu2O–CuO–PVA)/n-Si (MPS) Schottky barrier diodes (SBDs) using current–voltage–temperature (I–V–T) characteristics
The temperature effect on the conduction mechanism of Au/Cu 2 O–CuO–PVA/n-Si (MPS)
type Schottky barrier diodes (SBDs) have been investigated in detail in the wide temperature …
type Schottky barrier diodes (SBDs) have been investigated in detail in the wide temperature …
A comparison of Au/n-Si Schottky diodes (SDs) with/without a nanographite (NG) interfacial layer by considering interlayer, surface states (Nss) and series resistance …
In this paper, an organic interlayer, R s, and N ss on the transport-mechanisms (TMs), both
the Au/n-Si (MS) and Au/(Nanographite-PVP/n-Si (MPS)(SDs) were performed onto the …
the Au/n-Si (MS) and Au/(Nanographite-PVP/n-Si (MPS)(SDs) were performed onto the …
Temperature dependence of electrical characteristics and interface state densities of Au/n-type Si structures with SnS doped PVC interface
In this study, the electrical properties of Au/(SnS doped PVC)/n–Si structures were
investigated in detail using current/voltage (IV) data in wide temperature range (80–340 K by …
investigated in detail using current/voltage (IV) data in wide temperature range (80–340 K by …
Analysis of the current transport characteristics (CTCs) in the Au/n-Si Schottky diodes (SDs) with Al2O3 interfacial layer over wide temperature range
Temperature dependent electrical-parameters and CTCs in Au/Al 2 O 3/n-Si SDs have been
analysed between 200 K and 400 K using current/voltage (IV) characteristics. While the …
analysed between 200 K and 400 K using current/voltage (IV) characteristics. While the …
Fabrication, performance and applications of integrated nanodielectric properties of materials–a review
J Anandraj, GM Joshi - Composite Interfaces, 2018 - Taylor & Francis
The design and development of modern technological composites for the electrical and
electronic applications are highly crucial. The minitualization, performance and durability of …
electronic applications are highly crucial. The minitualization, performance and durability of …