Resistive switching (RS) is an interesting property shown by some materials systems that,
especially during the last decade, has gained a lot of interest for the fabrication of electronic …

This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

With the explosive growth of digital data in the era of the Internet of Things (IoT), fast and
scalable memory technologies are being researched for data storage and data-driven …

Non-volatile memory (NVM) will play a decisive role in the development of the next-
generation of electronic products. Therefore, the development of next-generation NVM is …

Resistive-switching memory (RRAM) based on transition metal oxides is a potential
candidate for replacing Flash and dynamic random access memory in future generation …

Resistive switching memory (RRAM) devices generally rely on the formation/dissolution of
conductive filaments through insulating materials, such as metal oxides and chalcogenide …

Electrically induced resistive switching in metal insulator-metal structures is a subject of
increasing scientific interest because it is one of the alternatives that satisfies current …

Resistive switching memory (RRAM) relies on the voltage-driven formation/disruption of a
conductive filament (CF) across a thin insulating layer. Due to the 1-D structure of the CF …

With the slowing down of the Moore's law and fundamental limitations due to the von-
Neumann bottleneck, continued improvements in computing hardware performance become …

A key requirement for using memristors in circuits is a predictive model for device behavior
that can be used in simulations and to guide designs. We analyze one of the most promising …