Controlling the intensity of emitted light and charge current is the basis of transferring and
processing information. By contrast, robust information storage and magnetic random …

Spin-orbit torque magnetic random-access memory (SOT-MRAM) offers promise for fast
operation and high endurance but faces challenges such as low switching current, reliable …

Abstract In the'Beyond Moore's Law'era, with increasing edge intelligence, domain-specific
computing embracing unconventional approaches will become increasingly prevalent. At …

Spintronics has been recently extended to neuromorphic computing because of its energy
efficiency and scalability. However, a biorealistic spintronic neuron with probabilistic …

We demonstrate a multi-pillar (MP) spin-orbit torque (SOT)-MRAM concept, which enables
lower write current and high-density integration. We experimentally demonstrate the …

As the current primary memory technology is reaching its limits, it is essential to explore
alternative memory technologies to accommodate modern applications and use cases …

The electronic and magnetic properties of Ga 1− x Fe x Sb (x= 0.125, 0.25, 0.5) have been
investigated using the first-principles calculations based on density functional theory (DFT) …

Spin-orbit torque (SOT) devices for magnetic random access memory (MRAM) are promising
due to their higher endurance, faster switching speed, and higher energy efficiency …

Spin valve effect driven by current-induced spin–orbit torques can help to realize electrically
controllable and miniaturized two terminal spintronic devices. Here, we show that in a …

Smart mobility refers to optimizing transportation and communications to integrate new
safety, efficiency, sustainability, and air quality standards. It interrelates various solutions …