10-kV Ga2O3 Charge-Balance Schottky Rectifier Operational at 200 °C

Y Qin, M **, Thickness, and Extension in kV-Class NiO/Ga2O3 Vertical Rectifiers
CC Chiang, JS Li, HH Wan, F Ren, SJ Pearton - Crystals, 2023 - mdpi.com
Ga2O3 heterojunction rectifiers have emerged as a novel candidate for various power
conversion applications by using NiO as the solution on the p-type side. In this work, the …

Ultrawide Bandgap Diamond/ε-Ga2O3 Heterojunction pn Diodes with Breakdown Voltages over 3 kV

J Zhang, N Liu, L Chen, X Yang, H Guo, Z Wang… - Nano Letters, 2024 - ACS Publications
Robust bipolar devices based on exclusively ultrawide bandgap (UWBG) semiconductors
are highly desired for advanced power electronics. The heterojunction strategy has been a …