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[HTML][HTML] Silicon carbide: A unique platform for metal-oxide-semiconductor physics
A sustainable energy future requires power electronics that can enable significantly higher
efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide …
efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide …
ON-resistance in vertical power FinFETs
M **
Z Shen, F Zhang, X Liu, G Sun, Y Zeng - Journal of Crystal Growth, 2023 - Elsevier
H 2 treatment is becoming a valuable method for the in-situ surface preparation of SiC wafer.
Then clean interfacial layer can be attained in manufacturing SiC-based devices. However …
Then clean interfacial layer can be attained in manufacturing SiC-based devices. However …
Ultraviolet antireflective porous nanoscale periodic hole array of 4H-SiC by photon-enhanced metal-assisted chemical etching
Benefitting from the outstanding stability and suitable bandgap energy, silicon carbide (SiC)
shows promising applications especially for ultraviolet light detection in harsh environments …
shows promising applications especially for ultraviolet light detection in harsh environments …
Systematic characterization of plasma-etched trenches on 4H-SiC wafers
MD Pirnaci, L Spitaleri, D Tenaglia, F Perricelli… - Acs Omega, 2021 - ACS Publications
Silicon carbide power semiconductors overcome some limitations of silicon chips, and
therefore, SiC is an attractive candidate for next-generation power electronics. In addition …
therefore, SiC is an attractive candidate for next-generation power electronics. In addition …
A fully self-aligned SiC trench MOSFET with 0.5 μm channel pitch
SiC power MOSFETs have made great progress since the first commercial devices were
introduced in 2011, but they are still far from their theoretical limits of performance. At …
introduced in 2011, but they are still far from their theoretical limits of performance. At …
Impact of post-trench process treatment on electron scattering mechanisms in 4H-SiC trench MOSFETs
Z Dong, Y Bai, C Yang, C Li, Y Tang… - … on Electron Devices, 2023 - ieeexplore.ieee.org
This work reports the influence of post-trench treatment on electron scattering mechanisms
in 4H-silicon carbide (SiC) trench MOSFETs. The mobilities representing different scattering …
in 4H-silicon carbide (SiC) trench MOSFETs. The mobilities representing different scattering …
The influence of SiC/SiO2 interface morphology on the electrical characteristics of SiC MOS structures
The effect of roughness at the SiC/SiO 2 interface on electrical properties of 4H-SiC MOS
devices has been investigated. Variations in surface roughness were generated by …
devices has been investigated. Variations in surface roughness were generated by …
Isotropic oxidation by plasma oxidation and investigation of RIE induced effects for development of 4H-SiC trench MOSFETs
In this work, we examined the oxidation growth rates of the (0001) Si-face and (11− 20) a-
faces of 4H-SiC by carrying out oxidation in the 850° C-950° C temperature range in a …
faces of 4H-SiC by carrying out oxidation in the 850° C-950° C temperature range in a …
Low-parasitic-capacitance self-aligned 4H-SiC nMOSFETs for harsh environment electronics
T Kurose, SI Kuroki, S Ishikawa, T Maeda… - Materials Science …, 2018 - Trans Tech Publ
Low-parasitic-capacitance 4H-SiC nMOSFETs using a novel self-aligned process were
suggested and demonstrated. In these nMOSFETs, device characteristics including parasitic …
suggested and demonstrated. In these nMOSFETs, device characteristics including parasitic …