We investigate the unexpected high-energy electroluminescence (EL) peaks observed in
long-wavelength InGaN light-emitting diodes (LEDs) with ground state emission peaks …

The properties of III-nitride quantum wells (QWs) are significantly affected by polarization
fields. We show that, in the case of wide QWs, there exist two fundamentally different …

In this paper we review the recent studies on wide InGaN quantum wells (QWs). InGaN QWs
are known to suffer from an extremely high built-in piezoelectric polarization, which …

The design of the active region is one of the most crucial problems to address in light
emitting devices (LEDs) based on III-nitride, due to the spatial separation of carriers by the …

In this paper, we demonstrate a novel approach utilizing tunnel junction (TJ) to realize GaN-
based distributed feedback (DFB) laser diodes (LDs). Thanks to the use of the TJ the top …

III-nitrides possess several unique qualities, which allow them to make the world brighter,
but their uniqueness is not always beneficial. The uniaxial nature of the wurtzite crystal leads …

In group‐III‐nitride quantum wells (QWs), a strong piezoelectric field is formed. A built‐in
potential from the p–n junction is working in the opposite direction depending on an …

This study examines the effects of negative voltage pulses (NVPs) on emission from (In, Ga)
N/Ga N light-emitting diodes (LEDs) with a wide quantum well in the active layer. For low dc …

(In, Ga) N-based light-emitting diodes (LEDs) are known to suffer from low electron-hole
wave-function overlap due to a high piezoelectric field. Staggered (In, Ga) N quantum wells …

Properties of tunnel junctions (TJs) grown by plasma-assisted molecular beam epitaxy are
investigated. Examined TJs consist of a (In, Ga) N quantum well (QW) sandwiched between …