This work reports the synthesis, characterization, and energy focused applications of the
novel lanthanides co-doped tantalum pentoxide hetero-system (Sm 3+-Eu 3+-Tm 3+: Ta 2 O …

Light rare earth (LRE3+) ions‐doped Ta2O5 semiconductor material is synthesized via
coprecipitation method with the bandgap energy of 3.94–4.05 eV and an orthorhombic …

In this communication, eco-friendly, cost effective and facile hydrothermal route was adopted
to synthesize pure WO 3, Nb-doped WO 3 and (Nb, Ta) co-doped WO 3 nanoparticles …

This work reports the first study on sustainable [Gd/Ho/Dy] co-doped Ta2O5 semiconductor
used in different microelectromechanical systems (MEMS). Lanthanide ternary do** …

Tantalum oxide (TaO x) has been extensively explored as a promising material for
memristive devices, but its atomic structures with different stoichiometries remain elusive. In …

Tantalum-based films with tailored composition, density, and electrical resistivity are of
interest for next generation hohlraums for magnetized indirect-drive inertial confinement …

Photovoltaic (PV) solar panels suffer from efficiency losses due to the accumulation of dust
on their surface during operation, as well as the loss of transparency in the top glass. The …

The optical band gap of the semiconductor CuTa 2 O 6, synthesised via solid-state reaction,
can be greatly reduced by annealing in ammonia, which leads to a significant red-shift of the …

Electrochemical impedance spectroscopy is used to study the effect of potential (E) on
capacitance (C) of porous tantalum coated with a layer of amorphous Ta2O5. It is shown that …

Tantalum-based films with tailored composition, density, and electrical resistivity are of
interest for next generation hohlraums for magnetized indirect-drive inertial confinement …