Atomic Layer Deposition Films for Resistive Random‐Access Memories
Resistive random‐access memory (RRAM) stands out as a promising memory technology
due to its ease of operation, high speed, affordability, exceptional stability, and potential to …
due to its ease of operation, high speed, affordability, exceptional stability, and potential to …
Artificial Synapse Emulated by Indium Tin Oxide/SiN/TaN Resistive Switching Device for Neuromorphic System
D Ju, S Kim, S Kim - Nanomaterials, 2023 - mdpi.com
In this paper, we fabricate an ITO/SiN/TaN memristor device and analyze its electrical
characteristics for a neuromorphic system. The device structure and chemical properties are …
characteristics for a neuromorphic system. The device structure and chemical properties are …
Improved resistive and synaptic switching performances in bilayer ZrOx/HfOx devices
In this study, we investigated the resistive switching (RS) characteristics of ZrO x/HfO x
bilayer-based resistive random-access memory (RRAM) devices. A 1.5-nm-thick HfO x layer …
bilayer-based resistive random-access memory (RRAM) devices. A 1.5-nm-thick HfO x layer …
Improved Uniformity of TaOx-Based Resistive Switching Memory Device by Inserting Thin SiO2 Layer for Neuromorphic System
D Ju, S Kim, J Jang, S Kim - Materials, 2023 - mdpi.com
RRAM devices operating based on the creation of conductive filaments via the migration of
oxygen vacancies are widely studied as promising candidates for next-generation memory …
oxygen vacancies are widely studied as promising candidates for next-generation memory …
Amorphous bn-based synaptic device with high performance in neuromorphic computing
The von Neumann architecture has faced challenges requiring high-fulfillment levels due to
the performance gap between its processor and memory. Among the numerous resistive …
the performance gap between its processor and memory. Among the numerous resistive …
Improved memory and synaptic device performance of HfO2-based multilayer memristor by inserting oxygen gradient TiOx layer
J Park, H Jang, Y Byun, H Na, H Ji, S Kim - Chaos, Solitons & Fractals, 2025 - Elsevier
Abstract Pt/Al/TiO x/HfO 2/AlN/Pt devices demonstrate abrupt filamentary resistive switching
(RS) that is strongly dependent on the bias polarity due to variations of the defect states in …
(RS) that is strongly dependent on the bias polarity due to variations of the defect states in …
Enhanced Reliability and Self‐Compliance of Synaptic Arrays for Multibit Encoded Neuromorphic Systems
Utilizing memristors to increase the density of crossbar arrays requires reducing
dependency on transistors. This paper presents an approach where the current limiting …
dependency on transistors. This paper presents an approach where the current limiting …
Compositional effects of hybrid MoS2–GO active layer on the performance of unipolar, low-power and multistate RRAM device
Currently, 2D nanomaterials-based resistive random access memory (RRAMs) are explored
on account of their tunable material properties enabling fabrication of low power and flexible …
on account of their tunable material properties enabling fabrication of low power and flexible …
Improved Resistive Switching Characteristics and Synaptic Functions of InZnO/SiO2 Bilayer Device
D Ju, M Koo, S Kim - Materials, 2023 - mdpi.com
This paper investigates the bipolar resistive switching and synaptic characteristics of IZO
single-layer and IZO/SiO2 bilayer two-terminal memory devices. The chemical properties …
single-layer and IZO/SiO2 bilayer two-terminal memory devices. The chemical properties …
[HTML][HTML] Effect of atomic layer annealing in plasma-enhanced atomic layer deposition of aluminum nitride on silicon
The effect of adding an atomic layer annealing step to a plasma-enhanced atomic layer
deposition process of aluminum nitride was investigated with commonly available materials …
deposition process of aluminum nitride was investigated with commonly available materials …