A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters
The band-modulation and sharp-switching mechanisms in Z 2-FET device operated as a
capacitorless 1T-DRAM memory are reviewed. The main parameters that govern the …
capacitorless 1T-DRAM memory are reviewed. The main parameters that govern the …
Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm
Dynamic random access memory (DRAM) cells are commonly used in electronic devices
and are formed from a single transistor and capacitor. Alternative approaches, which are …
and are formed from a single transistor and capacitor. Alternative approaches, which are …
A review of sharp-switching band-modulation devices
This paper reviews the recently-developed class of band-modulation devices, born from the
recent progress in fully-depleted silicon-on-insulator (FD-SOI) and other ultrathin-body …
recent progress in fully-depleted silicon-on-insulator (FD-SOI) and other ultrathin-body …
Experimental Demonstration of Operational Z2-FET Memory Matrix
In this letter, a functional Z 2-FET DRAM memory matrix is experimentally demonstrated for
the first time. Word-level operation with simultaneous reading and programming accesses is …
the first time. Word-level operation with simultaneous reading and programming accesses is …
The floating body effect of a WSe 2 transistor with volatile memory performance
ZP Wang, P **e, JY Mao, R Wang, JQ Yang… - Materials …, 2022 - pubs.rsc.org
The floating body effect in Meta-Stable-Dip RAM (MSDRAM) has been broadly employed in
implementing single-transistor capacitor-less (1T0C) dynamic random access memory …
implementing single-transistor capacitor-less (1T0C) dynamic random access memory …
Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint
C Dai, P Chen, S Qi, Y Hu, Z Song, M Dai - Nano Research, 2021 - Springer
There is a continuous demand to reduce the size of the devices that form a unit circuit, such
as logic gates and memory, to reduce their footprint and increase device integration. In order …
as logic gates and memory, to reduce their footprint and increase device integration. In order …
Reliability study of thin-oxide zero-ionization, zero-swing FET 1T-DRAM memory cell
The experimental time-dependent dielectric breakdown and ON voltage reliability of
advanced FD-SOI Z 2-FET memory cells are characterized for the first time. The front-gate …
advanced FD-SOI Z 2-FET memory cells are characterized for the first time. The front-gate …
Sharp logic switch based on band modulation
KH Lee, H El Dirani, P Fonteneau… - IEEE Electron …, 2019 - ieeexplore.ieee.org
The capability of Z 2-FET (Zero Impact Ionization and Zero Subthreshold Slope FET) to
operate as a sharp logic switch is demonstrated in advanced FD-SOI (Fully Depleted SOI) …
operate as a sharp logic switch is demonstrated in advanced FD-SOI (Fully Depleted SOI) …
Thorough understanding of retention time of Z2FET memory operation
M Duan, C Navarro, B Cheng… - … on Electron Devices, 2018 - ieeexplore.ieee.org
A recently reported zero impact ionization and zero subthreshold swing device Z2FET is a
promising candidate for capacitor-less dynamic random access memory (DRAM) memory …
promising candidate for capacitor-less dynamic random access memory (DRAM) memory …
3-D TCAD Study of the Implications of Channel Width and Interface States on FD-SOI Z2-FETs
3-D numerical technology computer-aided design simulations, based on experimental
results, are performed to study the origin of the large Z 2-FET dynamic random access …
results, are performed to study the origin of the large Z 2-FET dynamic random access …