As a new generation of light sources, GaN-based light-emitting diodes (LEDs) have wide
applications in lighting and display. Heat dissipation in LEDs is a fundamental issue that …

Comprehensive analysis of current spreading, temperature distribution, and near‐field
electroluminescence (EL) of high‐power flip‐chip InGaN/GaN light‐emitting diodes (LEDs) …

For modern high-power LEDs, self-heating becomes a critical factor determining their
functional characteristics and lifetime. For large-area LEDs with a complex structure, it is …

In this paper, we report on the development and fabrication of high power LED chips based
on AlGaInN. These chips are meant for flip‐chip mounting and have novel contact pad …

The junction temperature of red, green and blue high power light emitting diodes (LEDs) is
measured by using the emission peak shift method and the forward voltage method. Both …

The physical and mathematical models for prognostic research of possible thermal
operating modes of typical light-emitting diodes (LED) at critical electrical loads have been …

A high-power AlGaInN light-emitting flip-chip crystal with a new configuration of contact pads
is developed and fabricated. The implementation of a two-level metallization scheme with a …

The radiation performance of light-emitting diodes with hemispherical encapsulated lenses
at the packaging level is analyzed by a Monte Carlo ray-tracing simulation. Based on optical …

Comprehensive analysis of current spreading, temperature distribution, and near-field
electroluminescence of high-power “face-up” AlInGaN LEDs and LED Arrays was performed …

The mathematical and physical models of heat transfer were developed in order to
determine the critical conditions of heat transfer in typical light-emitting diodes (LED) …