Stochastic charge trap** in oxides: From random telegraph noise to bias temperature instabilities
T Grasser - Microelectronics Reliability, 2012 - Elsevier
Charge trap** at oxide defects fundamentally affects the reliability of MOS transistors. In
particular, charge trap** has long been made responsible for random telegraph and 1/f …
particular, charge trap** has long been made responsible for random telegraph and 1/f …
Structural chemistry of natural and synthetic inoophores and their complexes with cations
R Hilgenfeld, W Saenger - Host Guest Complex Chemistry II, 2005 - Springer
Although the antibiotics nigericin and lasalocid as first representatives of the naturally
occurring ionophores were isolated as early as 1951 from Streptomyces cultures 1), it was …
occurring ionophores were isolated as early as 1951 from Streptomyces cultures 1), it was …
The paradigm shift in understanding the bias temperature instability: From reaction–diffusion to switching oxide traps
One of the most important degradation modes in CMOS technologies, the bias temperature
instability (BTI) has been known since the 1960s. Already in early interpretations, charge …
instability (BTI) has been known since the 1960s. Already in early interpretations, charge …
A comparative study of different physics-based NBTI models
Different physics-based negative bias temperature instability (NBTI) models as proposed in
the literature are reviewed, and the predictive capability of these models is benchmarked …
the literature are reviewed, and the predictive capability of these models is benchmarked …
Compact modeling and simulation of circuit reliability for 65-nm CMOS technology
W Wang, V Reddy, AT Krishnan… - … on Device and …, 2007 - ieeexplore.ieee.org
Negative bias temperature instability (NBTI) and channel hot carrier (CHC) are the leading
reliability concerns for nanoscale transistors. The de facto modeling method to analyze CHC …
reliability concerns for nanoscale transistors. The de facto modeling method to analyze CHC …
Ubiquitous relaxation in BTI stressing—New evaluation and insights
The ubiquity of threshold voltage relaxation is demonstrated in samples with both
conventional and high-k dielectrics following various stress conditions. A technique based …
conventional and high-k dielectrics following various stress conditions. A technique based …
A two-stage model for negative bias temperature instability
Based on the established properties of the most commonly observed defect in amorphous
oxides, the E'center, we suggest a coupled two-stage model to explain the negative bias …
oxides, the E'center, we suggest a coupled two-stage model to explain the negative bias …
Recent issues in negative-bias temperature instability: Initial degradation, field dependence of interface trap generation, hole trap** effects, and relaxation
Recent advances in experimental techniques (on-the-fly and ultrafast techniques) allow
measurement of threshold voltage degradation due to negative-bias temperature instability …
measurement of threshold voltage degradation due to negative-bias temperature instability …
The universality of NBTI relaxation and its implications for modeling and characterization
As of date many NBTI models have been published which aim to successfully capture the
essential physics. As such, these models have mostly focused on the stress phase. The …
essential physics. As such, these models have mostly focused on the stress phase. The …
Impact of negative-bias temperature instability in nanoscale SRAM array: Modeling and analysis
One of the major reliability concerns in nanoscale very large-scale integration design is the
time-dependent negative-bias-temperature-instability (NBTI) degradation. Due to the higher …
time-dependent negative-bias-temperature-instability (NBTI) degradation. Due to the higher …