Stochastic charge trap** in oxides: From random telegraph noise to bias temperature instabilities

T Grasser - Microelectronics Reliability, 2012 - Elsevier
Charge trap** at oxide defects fundamentally affects the reliability of MOS transistors. In
particular, charge trap** has long been made responsible for random telegraph and 1/f …

Structural chemistry of natural and synthetic inoophores and their complexes with cations

R Hilgenfeld, W Saenger - Host Guest Complex Chemistry II, 2005 - Springer
Although the antibiotics nigericin and lasalocid as first representatives of the naturally
occurring ionophores were isolated as early as 1951 from Streptomyces cultures 1), it was …

The paradigm shift in understanding the bias temperature instability: From reaction–diffusion to switching oxide traps

T Grasser, B Kaczer, W Goes… - … on Electron Devices, 2011 - ieeexplore.ieee.org
One of the most important degradation modes in CMOS technologies, the bias temperature
instability (BTI) has been known since the 1960s. Already in early interpretations, charge …

A comparative study of different physics-based NBTI models

S Mahapatra, N Goel, S Desai, S Gupta… - IEEE transactions on …, 2013 - ieeexplore.ieee.org
Different physics-based negative bias temperature instability (NBTI) models as proposed in
the literature are reviewed, and the predictive capability of these models is benchmarked …

Compact modeling and simulation of circuit reliability for 65-nm CMOS technology

W Wang, V Reddy, AT Krishnan… - … on Device and …, 2007 - ieeexplore.ieee.org
Negative bias temperature instability (NBTI) and channel hot carrier (CHC) are the leading
reliability concerns for nanoscale transistors. The de facto modeling method to analyze CHC …

Ubiquitous relaxation in BTI stressing—New evaluation and insights

B Kaczer, T Grasser, J Roussel… - 2008 IEEE …, 2008 - ieeexplore.ieee.org
The ubiquity of threshold voltage relaxation is demonstrated in samples with both
conventional and high-k dielectrics following various stress conditions. A technique based …

A two-stage model for negative bias temperature instability

T Grasser, B Kaczer, W Goes… - 2009 IEEE …, 2009 - ieeexplore.ieee.org
Based on the established properties of the most commonly observed defect in amorphous
oxides, the E'center, we suggest a coupled two-stage model to explain the negative bias …

Recent issues in negative-bias temperature instability: Initial degradation, field dependence of interface trap generation, hole trap** effects, and relaxation

AE Islam, H Kufluoglu, D Varghese… - … on Electron Devices, 2007 - ieeexplore.ieee.org
Recent advances in experimental techniques (on-the-fly and ultrafast techniques) allow
measurement of threshold voltage degradation due to negative-bias temperature instability …

The universality of NBTI relaxation and its implications for modeling and characterization

T Grasser, W Gos, V Sverdlov… - 2007 IEEE International …, 2007 - ieeexplore.ieee.org
As of date many NBTI models have been published which aim to successfully capture the
essential physics. As such, these models have mostly focused on the stress phase. The …

Impact of negative-bias temperature instability in nanoscale SRAM array: Modeling and analysis

K Kang, H Kufluoglu, K Roy… - IEEE Transactions on …, 2007 - ieeexplore.ieee.org
One of the major reliability concerns in nanoscale very large-scale integration design is the
time-dependent negative-bias-temperature-instability (NBTI) degradation. Due to the higher …