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Design and analysis of logic circuits based on 8 nm double gate MOSFET
S Kundu, JK Mandal - Microsystem Technologies, 2024 - Springer
This paper proposed an 8 nm N-type Double Gate MOSFET with improved characteristics. A
comparative study has been done based on substrate and oxide material. The substrate and …
comparative study has been done based on substrate and oxide material. The substrate and …
Quasi-compact model of direct source-to-drain tunneling current in ultrashort-channel nanosheet MOSFETs by wavelet transform
K Yılmaz, B Iñíguez, F Lime… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
We present an analytical approach for the calculation of direct source-to-drain tunneling
(DSDT) probability of electrons in gate-all-around (GAA) silicon nanosheet (SiNS) …
(DSDT) probability of electrons in gate-all-around (GAA) silicon nanosheet (SiNS) …
Equivalent DG dimensions concept for compact modeling of short-channel and thin body GAA MOSFETs including quantum confinement
K Yılmaz, G Darbandy, G Reimbold… - … on Electron Devices, 2020 - ieeexplore.ieee.org
In this work, short-channel effects (SCEs) in cylindrical gate-all-around (GAA) MOSFETs with
intrinsic or lightly doped channels are analytically described by using the conformal …
intrinsic or lightly doped channels are analytically described by using the conformal …
[HTML][HTML] Fundamental understanding of quantum confinement effect on gate oxide reliability for gate-all around field-effect transistor
X Li, S Huang, J Wang, L Wang, L Li - Journal of Applied Physics, 2024 - pubs.aip.org
Gate oxide reliability has become a significant concern for emerging technology nodes,
particularly as transistors continue to scale down. Quantum confinement effects in nano …
particularly as transistors continue to scale down. Quantum confinement effects in nano …
Reliability of sub-20 nm black phosphorus trench (BP-T) MOSFET in high-temperature harsh environment
In this work, the high-temperature reliability of the Black Phosphorus Trench (BP-T) MOSFET
device has been analyzed. When the temperature is very high (500 K), the proposed device …
device has been analyzed. When the temperature is very high (500 K), the proposed device …
[PDF][PDF] PARAMETER VARIATIONS OF 20 NM GAAS JUNCTIONLESS-GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR WITH QUANTUM MECHANICAL EFFECTS
MFBINM RASOL - 2021 - eprints.utm.my
The scaling down of nanoelectronic device dimension beyond the Moore's Law era has
introduced the use of new material and device architecture of Metal-Oxide-Semiconductor …
introduced the use of new material and device architecture of Metal-Oxide-Semiconductor …
Parameter Variations of a Short Channel Gaas Junctionless-Gate-All-Around Field-Effect Transistor Including Quantum Mechanical Effects
This paper presents a numerical simulation to examine the performance of GaAs
Junctionless-Gate-All-Around (JGAA) Field-Effect Transistor (FET) under quantum effect …
Junctionless-Gate-All-Around (JGAA) Field-Effect Transistor (FET) under quantum effect …
[PDF][PDF] NBTI EM TRANSISTORES SEM JUNÇÕES FABRICADOS NA TECNOLOGIA SOI
NG JUNIOR - repositorio.fei.edu.br
Aqui apresenta-se o estudo do efeito Negative Bias Temperature Instability (NBTI) em
dispositivos Junctionless Nanowire Transistors (JNTs). Primordialmente, dispositivos JNTs …
dispositivos Junctionless Nanowire Transistors (JNTs). Primordialmente, dispositivos JNTs …