In this work, we present the study of a strong white emission (3.35–1.72 eV) from non-
stoichiometric silicon oxycarbide (SiC x O y) films deposited by hot filament chemical vapor …

The role of carbon atomic concentration on the transition from Silicon Rich Oxide (SRO) to
Silicon Oxicarbide films (SiC x O y) is reported. For this, optical and structural properties …

The historical bottleneck for truly high scale integrated photonics is the light emitter. The lack
of monolithically integrable light sources increases costs and reduces scalability. Quantum …

This work proposes and demonstrates the concept of a complementary metal-oxide-
semiconductor (CMOS)-compatible electrophotonic monolithic refractive index sensor in …

Abstract" Debido a la importancia de los materiales semiconductores para la fabricación de
dispositivos emisores de luz, principalmente la capa activa. Es de vital importancia conocer …

Abstract “Actualmente el silicio es la base de la industria microelectrónica. Aun así, su uso
para el desarrollo de dispositivos optoelectrónicos se ha limitado a celdas solares y …

In this work, the effect of thermal annealing in H2 atmosphere on the photoluminescence
(PL) of SiC x O y films is presented. These films were deposited by HFCVD technique at …

This work presents a novel integrable silicon photodetector which can only be conceived as
part of a monolithic electrophotonic basic structure formed of a silicon light emitter …

In this work the effective electrode materials for autonomous energy sources based on
porous silicon modified by platinum nanoparticles have been obtained. The functional …

In this work, we study the optical response of MOS-like transistors with a Si3N4 integrated
waveguide as the dielectric on the gate, and P-type substrate with 1× 1012 cm-3 acceptor …