Superconducting switch having a persistent and a non-persistent state
Superconducting switch having a persistent and a non persistent state and its use as a
driver in a memory system are described. An example superconducting switch includes a …
driver in a memory system are described. An example superconducting switch includes a …
Magnetic field sensor having magnetoresistance elements with opposite bias directions
B Cadugan, R Lassalle-Balier, A Latham… - US Patent …, 2020 - Google Patents
(57) ABSTRACT A magnetic field sensor can include a substrate, a first magnetoresistance
element disposed over the substrate and including a first maximum response axis and a first …
element disposed over the substrate and including a first maximum response axis and a first …
Dual manetoresistance element with two directions of response to external magnetic fields
R Lassalle-Balier, P Campiglio - US Patent 10,734,443, 2020 - Google Patents
A material stack includes a first magnetoresistance element with a first direction of response
to an external magnetic field and a second magnetoresistance element with second …
to an external magnetic field and a second magnetoresistance element with second …
Current sensor using modulation of or change of sensitivity of magnetoresistance elements
B Cadugan, R Lassalle-Balier, A Latham… - US Patent …, 2021 - Google Patents
A current sensor can indirectly measure a sensed current by directly measuring static
perturbing AC magnetic fields with magnetoresistance elements, the perturbing magnetic …
perturbing AC magnetic fields with magnetoresistance elements, the perturbing magnetic …
Dual magnetic tunnel junction (DMTJ) stack design
A dual magnetic tunnel junction (DMTJ) is disclosed with a PL1/TB1/free
layer/TB2/PL2/cap** layer configuration wherein a first tunnel barrier (TB1) has a …
layer/TB2/PL2/cap** layer configuration wherein a first tunnel barrier (TB1) has a …
Three-dimensional (3D) magnetic memory device comprising a magnetic tunnel junction (MTJ) having a metallic buffer layer
M Gajek, M Tzoufras - US Patent 10,693,056, 2020 - Google Patents
A magnetic memory device is provided. The magnetic memory device includes:(i) a
cylindrical core,(ii) a metallic buffer layer that surrounds the cylindrical core,(iii) a first …
cylindrical core,(ii) a metallic buffer layer that surrounds the cylindrical core,(iii) a first …
Magnetic field sensor that corrects for the effect of a stray magnetic field using one or more magnetoresistance elements, each having a reference layer with the same …
R Lassalle-Balier, B Cadugan - US Patent 10,746,820, 2020 - Google Patents
A magnetic field sensor can include a magnetic field sensor can include a substrate having
a major surface in an xy plane with an x axis and ay axis. The magnetic field sensor can also …
a major surface in an xy plane with an x axis and ay axis. The magnetic field sensor can also …
Reversed mode spin torque oscillator with shaped field generation layer
Q Le, Y Ahn, S Okamura, Z Gao, A Goncharov… - US Patent …, 2020 - Google Patents
The present disclosure generally relates to data storage devices, and more specifically, to a
magnetic media drive employing a magnetic recording head. The head includes a trailing …
magnetic media drive employing a magnetic recording head. The head includes a trailing …
Magnetic field sensor for measuring an amplitude and a direction of a magnetic field using one or more magnetoresistance elements having reference layers with the …
R Lassalle-Balier, B Cadugan - US Patent 10,670,669, 2020 - Google Patents
(57) ABSTRACT A magnetic field sensor can include a substrate disposed in an xy plane
with x and y axes; one or more magnetoresis tance elements, wherein magnetic directions of …
with x and y axes; one or more magnetoresis tance elements, wherein magnetic directions of …
Methods and systems for writing to magnetic memory devices utilizing alternating current
A method for selectively writing to STT-MRAM using an AC current is provided. The method
is performed in a memory device including two or more multilevel magnetic tunnel junctions …
is performed in a memory device including two or more multilevel magnetic tunnel junctions …