Review of recent progress on vertical GaN-based PN diodes
T Pu, U Younis, HC Chiu, K Xu, HC Kuo… - Nanoscale Research …, 2021 - Springer
As a representative wide bandgap semiconductor material, gallium nitride (GaN) has
attracted increasing attention because of its superior material properties (eg, high electron …
attracted increasing attention because of its superior material properties (eg, high electron …
Vertical GaN power devices: Device principles and fabrication technologies—Part I
Recent years have witnessed a tremendous development of vertical gallium nitride (GaN)
power devices, a new class of device technology that could be the key enabler for next …
power devices, a new class of device technology that could be the key enabler for next …
GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power
electronics with capabilities beyond existing technologies due to its large bandgap …
electronics with capabilities beyond existing technologies due to its large bandgap …
Demonstration of> 6.0-kV breakdown voltage in large area vertical GaN pn diodes with step-etched junction termination extensions
Vertical gallium nitride (GaN) pn diodes have garnered significant interest for use in power
electronics where high-voltage blocking and high-power efficiency are of concern. In this …
electronics where high-voltage blocking and high-power efficiency are of concern. In this …
Ultra-wide-bandgap AlGaN power electronic devices
Abstract" Ultra" wide-bandgap semiconductors are an emerging class of materials with
bandgaps greater than that of gallium nitride (EG> 3.4 eV) that may ultimately benefit a wide …
bandgaps greater than that of gallium nitride (EG> 3.4 eV) that may ultimately benefit a wide …
A Decade of Nonpolar and Semipolar III‐Nitrides: A Review of Successes and Challenges
The performance of III‐nitride devices is degraded by polarization in a wurtzite crystal
structure. Nonpolar and semipolar III‐nitrides have been extensively studied since the early …
structure. Nonpolar and semipolar III‐nitrides have been extensively studied since the early …
High-Voltage and High- Vertical GaN-on-GaN Schottky Barrier Diode With Nitridation-Based Termination
S Han, S Yang, K Sheng - IEEE Electron Device Letters, 2018 - ieeexplore.ieee.org
We report a high-performance vertical GaN-on-GaN Schottky barrier diode (SBD) with a
planar nitridation-based termination (NT) technique. The developed NT-SBD with nearly …
planar nitridation-based termination (NT) technique. The developed NT-SBD with nearly …
Robust avalanche in 1.7 kV vertical GaN diodes with a single-implant bevel edge termination
This work demonstrates a novel junction termination extension (JTE) with a graded charge
profile for vertical GaN pn diodes. The fabrication of this JTE obviates GaN etch and requires …
profile for vertical GaN pn diodes. The fabrication of this JTE obviates GaN etch and requires …
Design and fabrication of GaN pn junction diodes with negative beveled-mesa termination
We report on homoepitaxial GaN pn junction diodes with a negative beveled-mesa
termination. The electric field distribution in a beveled-mesa was investigated using TCAD …
termination. The electric field distribution in a beveled-mesa was investigated using TCAD …