[HTML][HTML] Ferroelectric field effect transistors: Progress and perspective

JY Kim, MJ Choi, HW Jang - APL Materials, 2021 - pubs.aip.org
Ferroelectric field effect transistors (FeFETs) have attracted attention as next-generation
devices as they can serve as a synaptic device for neuromorphic implementation and a one …

Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

N Zagni, FM Puglisi, P Pavan… - Proceedings of the …, 2023 - ieeexplore.ieee.org
Ferroelectric transistors (FeFETs) based on doped hafnium oxide (HfO2) have received
much attention due to their technological potential in terms of scalability, high-speed, and …

Ferroelectric ternary content-addressable memory for one-shot learning

K Ni, X Yin, AF Laguna, S Joshi, S Dünkel… - Nature …, 2019 - nature.com
Deep neural networks are efficient at learning from large sets of labelled data, but struggle to
adapt to previously unseen data. In pursuit of generalized artificial intelligence, one …

CMOS-compatible compute-in-memory accelerators based on integrated ferroelectric synaptic arrays for convolution neural networks

MK Kim, IJ Kim, JS Lee - Science Advances, 2022 - science.org
Convolutional neural networks (CNNs) have gained much attention because they can
provide superior complex image recognition through convolution operations. Convolution …

Rowpress: Amplifying read disturbance in modern dram chips

H Luo, A Olgun, AG Yağlıkçı, YC Tuğrul… - Proceedings of the 50th …, 2023 - dl.acm.org
Memory isolation is critical for system reliability, security, and safety. Unfortunately, read
disturbance can break memory isolation in modern DRAM chips. For example, RowHammer …

Post-CMOS compatible aluminum scandium nitride/2D channel ferroelectric field-effect-transistor memory

X Liu, D Wang, KH Kim, K Katti, J Zheng… - Nano Letters, 2021 - ACS Publications
Recent advances in oxide ferroelectric (FE) materials have rejuvenated the field of low-
power, nonvolatile memories and made FE memories a commercial reality. Despite these …

FeCAM: A universal compact digital and analog content addressable memory using ferroelectric

X Yin, C Li, Q Huang, L Zhang… - … on Electron Devices, 2020 - ieeexplore.ieee.org
Ferroelectric field effect transistors (FeFETs) are being actively investigated with the
potential for in-memory computing (IMC) over other nonvolatile memories (NVMs). Content …

Achieving software-equivalent accuracy for hyperdimensional computing with ferroelectric-based in-memory computing

A Kazemi, F Müller, MM Sharifi, H Errahmouni… - Scientific reports, 2022 - nature.com
Hyperdimensional computing (HDC) is a brain-inspired computational framework that relies
on long hypervectors (HVs) for learning. In HDC, computational operations consist of simple …

Fundamentally understanding and solving rowhammer

O Mutlu, A Olgun, AG Yağlıkcı - Proceedings of the 28th Asia and South …, 2023 - dl.acm.org
We provide an overview of recent developments and future directions in the RowHammer
vulnerability that plagues modern DRAM (Dynamic Random Memory Access) chips, which …

Reconfigurable compute-in-memory on field-programmable ferroelectric diodes

X Liu, J Ting, Y He, MMA Fiagbenu, J Zheng… - Nano …, 2022 - ACS Publications
The deluge of sensors and data generating devices has driven a paradigm shift in modern
computing from arithmetic-logic centric to data-centric processing. Data-centric processing …