Low‐Temperature Processing Methods for Tin Oxide as Electron Transporting Layer in Scalable Perovskite Solar Cells

M Haghighi, N Ghazyani, S Mahmoodpour… - Solar …, 2023 - Wiley Online Library
Perovskite solar cell (PSC) technology experiences a remarkably rapid growth toward
commercialization with certified efficiency of over 25%, along with the outstanding …

Selectively nitrogen doped ALD-IGZO TFTs with extremely high mobility and reliability

DG Kim, H Choi, YS Kim, DH Lee, HJ Oh… - … Applied Materials & …, 2023 - ACS Publications
Achieving high mobility and reliability in atomic layer deposition (ALD)-based IGZO thin-film
transistors (TFTs) with an amorphous phase is vital for practical applications in relevant …

Spray‐pyrolyzed high‐k zirconium‐aluminum‐oxide dielectric for high performance metal‐oxide thin‐film transistors for low power displays

MM Islam, JK Saha, MM Hasan, J Kim… - Advanced Materials …, 2021 - Wiley Online Library
A high‐k, zirconium‐aluminum‐oxide (ZAO) gate insulator (GI) using low‐cost spray
pyrolysis technique for large area and low power electronics is demonstrated. The high …

Control of spontaneous charging of sliding water drops by plasma-surface treatment

F Darvish, S Shumaly, X Li, Y Dong, D Diaz, M Khani… - Scientific Reports, 2024 - nature.com
Slide electrification is the spontaneous separation of electric charges at the rear of water
drops sliding over solid surfaces. This study delves into how surfaces treated with a low …

Improvement of metal-oxide films by post atmospheric Ar/O2 plasma treatment for thin film transistors with high mobility and excellent stability

RN Bukke, NN Mude, MM Islam, J Jang - Applied Surface Science, 2021 - Elsevier
Metal-oxide thin-film transistors (MO TFTs) with suitable device performances such as high
field-effect mobility (μ FE), low subthreshold swing, high ON/OFF current ratio, and excellent …

Rational design of oxide heterostructure InGaZnO/TiO2 for high-performance thin-film transistors

A Abliz, P Nurmamat, D Wan - Applied Surface Science, 2023 - Elsevier
In this study, hetero-structured and self-passivated oxide thin film transistors (TFTs) were
fabricated, wherein the channel comprised a N 2 O plasma (a-IGZO: N 2 O) treated a-IGZO …

High‐performance zinc tin oxide TFTs with active layers deposited by atomic layer deposition

CR Allemang, TH Cho, O Trejo, S Ravan… - Advanced Electronic …, 2020 - Wiley Online Library
New deposition techniques for amorphous oxide semiconductors compatible with silicon
back end of line manufacturing are needed for 3D monolithic integration of thin‐film …

Enhancement-mode ZnGa2O4-based Phototransistor with high UV–visible rejection ratio grown by metalorganic chemical vapor deposition

S Rana, FG Tarntair, RH Horng, JP Singh - Journal of Alloys and …, 2024 - Elsevier
In this study, a high-crystallinity zinc gallium oxide (ZnGa 2 O 4) epilayer of about 80 nm
thickness was successfully grown using metalorganic chemical vapor deposition. X-ray …

Effects of nitrogen and hydrogen codo** on the electrical performance and reliability of InGaZnO thin-film transistors

A Abliz, Q Gao, D Wan, X Liu, L Xu, C Liu… - … Applied Materials & …, 2017 - ACS Publications
Despite intensive research on improvement in electrical performances of ZnO-based thin-
film transistors (TFTs), the instability issues have limited their applications for complementary …