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Low‐Temperature Processing Methods for Tin Oxide as Electron Transporting Layer in Scalable Perovskite Solar Cells
Perovskite solar cell (PSC) technology experiences a remarkably rapid growth toward
commercialization with certified efficiency of over 25%, along with the outstanding …
commercialization with certified efficiency of over 25%, along with the outstanding …
Selectively nitrogen doped ALD-IGZO TFTs with extremely high mobility and reliability
DG Kim, H Choi, YS Kim, DH Lee, HJ Oh… - … Applied Materials & …, 2023 - ACS Publications
Achieving high mobility and reliability in atomic layer deposition (ALD)-based IGZO thin-film
transistors (TFTs) with an amorphous phase is vital for practical applications in relevant …
transistors (TFTs) with an amorphous phase is vital for practical applications in relevant …
Spray‐pyrolyzed high‐k zirconium‐aluminum‐oxide dielectric for high performance metal‐oxide thin‐film transistors for low power displays
A high‐k, zirconium‐aluminum‐oxide (ZAO) gate insulator (GI) using low‐cost spray
pyrolysis technique for large area and low power electronics is demonstrated. The high …
pyrolysis technique for large area and low power electronics is demonstrated. The high …
Control of spontaneous charging of sliding water drops by plasma-surface treatment
Slide electrification is the spontaneous separation of electric charges at the rear of water
drops sliding over solid surfaces. This study delves into how surfaces treated with a low …
drops sliding over solid surfaces. This study delves into how surfaces treated with a low …
Improvement of metal-oxide films by post atmospheric Ar/O2 plasma treatment for thin film transistors with high mobility and excellent stability
Metal-oxide thin-film transistors (MO TFTs) with suitable device performances such as high
field-effect mobility (μ FE), low subthreshold swing, high ON/OFF current ratio, and excellent …
field-effect mobility (μ FE), low subthreshold swing, high ON/OFF current ratio, and excellent …
Rational design of oxide heterostructure InGaZnO/TiO2 for high-performance thin-film transistors
A Abliz, P Nurmamat, D Wan - Applied Surface Science, 2023 - Elsevier
In this study, hetero-structured and self-passivated oxide thin film transistors (TFTs) were
fabricated, wherein the channel comprised a N 2 O plasma (a-IGZO: N 2 O) treated a-IGZO …
fabricated, wherein the channel comprised a N 2 O plasma (a-IGZO: N 2 O) treated a-IGZO …
High‐performance zinc tin oxide TFTs with active layers deposited by atomic layer deposition
New deposition techniques for amorphous oxide semiconductors compatible with silicon
back end of line manufacturing are needed for 3D monolithic integration of thin‐film …
back end of line manufacturing are needed for 3D monolithic integration of thin‐film …
Enhancement-mode ZnGa2O4-based Phototransistor with high UV–visible rejection ratio grown by metalorganic chemical vapor deposition
In this study, a high-crystallinity zinc gallium oxide (ZnGa 2 O 4) epilayer of about 80 nm
thickness was successfully grown using metalorganic chemical vapor deposition. X-ray …
thickness was successfully grown using metalorganic chemical vapor deposition. X-ray …
Effects of nitrogen and hydrogen codo** on the electrical performance and reliability of InGaZnO thin-film transistors
A Abliz, Q Gao, D Wan, X Liu, L Xu, C Liu… - … Applied Materials & …, 2017 - ACS Publications
Despite intensive research on improvement in electrical performances of ZnO-based thin-
film transistors (TFTs), the instability issues have limited their applications for complementary …
film transistors (TFTs), the instability issues have limited their applications for complementary …