A thermal-aware device design considerations for nanoscale SOI and bulk FinFETs
Thermal performance characteristics of fin-shaped FETs (FinFETs) are studied and analyzed
in this paper for sub-22-nm technologies using the well-calibrated TCAD simulations. In this …
in this paper for sub-22-nm technologies using the well-calibrated TCAD simulations. In this …
Time and frequency domain characterization of transistor self-heating
S Makovejev, SH Olsen, V Kilchytska… - IEEE transactions on …, 2013 - ieeexplore.ieee.org
Pulsed IV and AC conductance or RF characterization techniques, within the time and the
frequency domain, respectively, represent two approaches for evaluating self-heating in …
frequency domain, respectively, represent two approaches for evaluating self-heating in …
Experimental investigation of self heating effect (SHE) in multiple-fin SOI FinFETs
In this work, the self-heating effect (SHE) on metal gate multiple-fin SOI FinFETs is studied
by adopting the ac conductance technique to extract the thermal resistance and temperature …
by adopting the ac conductance technique to extract the thermal resistance and temperature …
An improved model of self-heating effects for ultrathin body SOI nMOSFETs based on phonon scattering analysis
G Zhang, Y Gu, J Li, H Tao - IEEE Electron Device Letters, 2015 - ieeexplore.ieee.org
Self-heating effects of ultrathin body silicon-on-insulator (SOI) structure are studied by
introducing the phonon scattering mechanisms. An improved model of self-heating effects is …
introducing the phonon scattering mechanisms. An improved model of self-heating effects is …
Assessment of NBTI in Presence of Self-Heating in High- SOI FinFETs
We have experimentally investigated the threshold voltage shift due to negative bias
temperature instability (NBTI). The NBTI stress in the absence of self-heating (SH) is …
temperature instability (NBTI). The NBTI stress in the absence of self-heating (SH) is …
Nanometric integrated temperature and thermal sensors in CMOS-SOI technology
M Malits, Y Nemirovsky - Sensors, 2017 - mdpi.com
This paper reviews and compares the thermal and noise characterization of CMOS
(complementary metal-oxide-semiconductor) SOI (Silicon on insulator) transistors and …
(complementary metal-oxide-semiconductor) SOI (Silicon on insulator) transistors and …
Reliability assessment of 10nm FinFET process technology
JJ Kim, M **, H Sagong, S Pae - 2018 IEEE International …, 2018 - ieeexplore.ieee.org
A systematic study of accurate reliability projection in lOnm FinFETs are discussed in this
paper. As the semiconductor process technology continuously scales down to achieve …
paper. As the semiconductor process technology continuously scales down to achieve …
[PDF][PDF] Survey on latest FinFET technology and its challenges in digital circuits and IC's
AA Sujata, D Lalitha - International Journal of Electronics …, 2018 - csjournals.com
Last few decades, the technologies for digital circuits are suffering from power, delay, speed
and area to meet the requirements of fabrication of Integrated Circuits (IC's). Now a days, the …
and area to meet the requirements of fabrication of Integrated Circuits (IC's). Now a days, the …
In-situ monitoring of self-heating effect in aggressively scaled FinFETs and its quantitative impact on hot carrier degradation under dynamic circuit operation
Self-heating effect (SHE) in aggressively scaled SOI FinFETs is experimentally and
quantitatively investigated by utilizing a sub-nanosecond (ns) characterization technique. A …
quantitatively investigated by utilizing a sub-nanosecond (ns) characterization technique. A …
Improvement of high-frequency FinFET performance by fin width engineering
S Makovejev, SH Olsen, MKM Arshad… - … SOI Conference (SOI …, 2012 - ieeexplore.ieee.org
Frequency dependent behaviour of MOSFETs arises from self-heating and source-to-drain
coupling through the substrate. In this work the output conductance variation with frequency …
coupling through the substrate. In this work the output conductance variation with frequency …