A complete inspection of the capabilities of reflectance anisotropy spectroscopy (RAS) in
studying the adsorption of molecules or atoms on the Si (001)-(2× 1) surface is presented …

A technique for the rapid, uncomplicated and lithography free fabrication of silicon
nanostructures on both n-type and p-type Si (100) substrates is presented. The …

We demonstrate the successful down-scaling of donor-based silicon quantum dot structures
to the single donor limit. These planar devices are realized in ultra high vacuum (UHV) by …

The possibility of exploiting the self-organization of mobile silicon atoms on silicon surfaces
during ultrahigh vacuum thermal annealing for the construction of silicon-on-silicon …

We have used infrared absorption spectroscopy and x-ray photoelectron spectroscopy to
study the thermal evolution (under ultrahigh vacuum conditions) of ultrathin silicon oxide …

We report a systematic spectroscopic and structural investigation of 3C-silicon carbide (3C-
SiC) films grown on Si (100)-(2× 1) by codeposition of C60 molecules and Si atoms in …

An overview of various cleaning procedures for silicon surfaces is presented. Because in-
situ cleaning becomes more and more important for nanotechnology the paper concentrates …

The creation of structures on silicon surfaces with dimensions below current production
limits (ca. 150 nm) is one of the most important objectives for future development in the …

In this thesis we investigate electron transport between ultra-thin, atomically abrupt, buried,
nanoscale gaps in silicon, formed between coplanar source and drain leads consisting of …

A scanning photoelectron microscope, utilizing a focused beam of monochromatized
photons in the energy range from 15 to 150 eV, has been used to study the thermal …