Si–Ge–Sn alloys: From growth to applications
In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
Review of Si-based GeSn CVD growth and optoelectronic applications
Y Miao, G Wang, Z Kong, B Xu, X Zhao, X Luo, H Lin… - Nanomaterials, 2021 - mdpi.com
GeSn alloys have already attracted extensive attention due to their excellent properties and
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …
[HTML][HTML] An optically pumped 2.5 μm GeSn laser on Si operating at 110 K
This paper reports the demonstration of optically pumped GeSn edge-emitting lasers grown
on Si substrates. The whole device structures were grown by an industry standard chemical …
on Si substrates. The whole device structures were grown by an industry standard chemical …
Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K
A Si-based monolithic laser is strongly desired for the full integration of Si-photonics. Lasing
from the direct bandgap group-IV GeSn alloy has opened a new avenue, different from the …
from the direct bandgap group-IV GeSn alloy has opened a new avenue, different from the …
Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection
Normal-incidence Ge_1-xSn_x photodiode detectors with Sn compositions of 7 and 10%
have been demonstrated. Such detectors were based on Ge/Ge_1-xSn_x/Ge double …
have been demonstrated. Such detectors were based on Ge/Ge_1-xSn_x/Ge double …
Recent progress in GeSn growth and GeSn-based photonic devices
J Zheng, Z Liu, C Xue, C Li, Y Zuo… - Journal of …, 2018 - iopscience.iop.org
The GeSn binary alloy is a new group IV material that exhibits a direct bandgap when the Sn
content exceeds 6%. It shows great potential for laser use in optoelectronic integration …
content exceeds 6%. It shows great potential for laser use in optoelectronic integration …
Progress on germanium–tin nanoscale alloys
Group IV alloys have attracted interest in the drive to create Si compatible, direct band gap
materials for implementation in complementary metal oxide semiconductor (CMOS) and …
materials for implementation in complementary metal oxide semiconductor (CMOS) and …
Growth and strain modulation of GeSn alloys for photonic and electronic applications
Z Kong, G Wang, R Liang, J Su, M Xun, Y Miao, S Gu… - Nanomaterials, 2022 - mdpi.com
GeSn materials have attracted considerable attention for their tunable band structures and
high carrier mobilities, which serve well for future photonic and electronic applications. This …
high carrier mobilities, which serve well for future photonic and electronic applications. This …
[HTML][HTML] Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Temperature-dependent characteristics of GeSn light-emitting diodes with Sn composition
up to 9.2% have been systematically studied. Such diodes were based on Ge/GeSn/Ge …
up to 9.2% have been systematically studied. Such diodes were based on Ge/GeSn/Ge …
[HTML][HTML] All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
In this work, all group-IV band-to-band lasers based on SiGeSn/GeSn/SiGeSn multi-
quantum-well structures were demonstrated. Lasing performance was investigated via two 4 …
quantum-well structures were demonstrated. Lasing performance was investigated via two 4 …