[PDF][PDF] Recent progress in metal-organic chemical vapor deposition of N-polar group-III nitrides
Progress in metal-organic chemical vapor deposition of high quality () 0001 N-polar (Al, Ga,
In) N films on sapphire, silicon carbide and silicon substrates is reviewed with focus on key …
In) N films on sapphire, silicon carbide and silicon substrates is reviewed with focus on key …
A critical review of AlGaN/GaN-heterostructure based Schottky diode/HEMT hydrogen (H2) sensors for aerospace and industrial applications
Hydrogen (H 2) has been widely used in H 2 fuelled vehicles, semiconductor fabrication,
medical treatments, chemical industry and industrial aerospace applications. However, H 2 …
medical treatments, chemical industry and industrial aerospace applications. However, H 2 …
Polarity and its influence on growth mechanism during MOVPE growth of GaN sub-micrometer rods
SF Li, S Fuendling, X Wang, S Merzsch… - Crystal growth & …, 2011 - ACS Publications
The influence of polarity during the MOVPE growth of GaN based sub-micrometer (sub-μm)
rods has mostly been neglected up to now. In this paper we demonstrate that the surface …
rods has mostly been neglected up to now. In this paper we demonstrate that the surface …
Graphene‐Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non‐Polar Sapphire Substrates for Green Light Emitting Diodes
Lattice polarity is a key point for hexagonal semiconductors such as GaN. Unfortunately,
only Ga‐polarity GaN have been achieved on graphene till now. Here, the epitaxy of high …
only Ga‐polarity GaN have been achieved on graphene till now. Here, the epitaxy of high …
DNA-CTMA functionalized GaN surfaces for NO2 gas sensor at room temperature under UV illumination
Considering the power consumption and safety risks in the presence of combustible gases,
sensor operation at room temperature (RT∼ 28° C) has drawn much interest in recent days …
sensor operation at room temperature (RT∼ 28° C) has drawn much interest in recent days …
Porous GaN submicron rods for gas sensor with high sensitivity and excellent stability at high temperature
M Zhang, C Zhao, H Gong, G Niu… - ACS applied materials & …, 2019 - ACS Publications
Highly porous GaN submicron rods have been synthesized successfully by a facile
hydrothermal method and heat treatment under controlled atmosphere. The morphology and …
hydrothermal method and heat treatment under controlled atmosphere. The morphology and …
Highly sensitive nonpolar a-plane GaN based hydrogen diode sensor with textured active area using photo-chemical etching
KH Baik, J Kim, S Jang - sensors and actuators B: chemical, 2017 - Elsevier
In this work, a highly sensitive a-plane (11 2¯ 0) GaN (a-GaN) based hydrogen sensor with a
large active surface area on the Schottky contact region was fabricated and characterized …
large active surface area on the Schottky contact region was fabricated and characterized …
Polarity control and fabrication of lateral polarity structures of III-nitride thin films and devices: Progress and prospects
Due to their non-centrosymmetric crystal orientation, wurtzite III-nitride crystals have two
distinct orientations, ie III-polar and N-polar along the c-axis. Extensive effort has been …
distinct orientations, ie III-polar and N-polar along the c-axis. Extensive effort has been …
Pt-AlGaN/GaN hydrogen sensor with water-blocking PMMA layer
One of the biggest issues with GaN-based hydrogen sensors is their sensitivity to humidity in
the ambient. We demonstrate that encapsulation of Pt-AlGaN/GaN Schottky diode with poly …
the ambient. We demonstrate that encapsulation of Pt-AlGaN/GaN Schottky diode with poly …
Comparison of stress states in GaN films grown on different substrates: Langasite, sapphire and silicon
We demonstrate the evolution of GaN films on novel langasite (LGS) substrate by plasma-
assisted molecular beam epitaxy, and assessed the quality of grown GaN film by comparing …
assisted molecular beam epitaxy, and assessed the quality of grown GaN film by comparing …