In this review we present some of the recent advances in the field of silicon nitride photonic
integrated circuits. The review focuses on the material deposition techniques currently …

CMOS platforms with a high nonlinear figure of merit are highly sought after for high
photonic quantum efficiencies, enabling functionalities not possible from purely linear effects …

Nonlinear silicon photonic devices have attracted considerable attention thanks to their
ability to show large third-order nonlinear effects at moderate power levels allowing for all …

The formation of optical solitons arises from the simultaneous presence of dispersive and
nonlinear properties within a propagation medium. Chip-scale devices that support optical …

Supercontinuum generation is demonstrated in a 3-mm-long ultra-silicon-rich nitride (USRN)
waveguide by launching 500 fs pulses centered at 1555 nm with a pulse energy of 17 pJ …

Ion-sliced thin-film lithium niobate (LN) compact waveguide technology has facilitated the
resurgence of integrated photonics based on the material. The thin-film waveguides offer …

Thanks to their unique optical properties Ge–Sb–S–Se–Te amorphous chalcogenide
materials and compounds offer tremendous opportunities of applications, in particular in …

Dense integration of photonic integrated circuits demands waveguides simultaneously
fulfilling requirements on compactness, low loss, high nonlinearity, and capabilities for mass …

Nonlinear integrated optics leveraging platforms with high nonlinear figure of merit offer
energy efficient optical signal processing capabilities. Over the last five years, CMOS …

The dispersive nonlinear refractive index of ultra-silicon-rich nitride, and its two-photon and
three-photon absorption coefficients are measured in the wavelength range between 0.8 µm …