Qualification of GaN microwave transistors for the European Space Agency Biomass mission

A Barnes, F Heliere, P Villar, H Stuhldreier… - Microelectronics …, 2018 - Elsevier
This paper describes the methodology and results obtained from performing a rigorous
space qualification of European microwave GaN technology for the European Space …

Fully automated RF-thermal stress workbench with S-parameters tracking for GaN reliability analysis

D Saugnon, JG Tartarin, B Franc… - 2018 13th European …, 2018 - ieeexplore.ieee.org
The rapid development of III-V technologies for telecommunication and radar markets need
the meeting of performances (power, frequency) criteria as well as reliability assessment …

ADS SpE Fr High Efficiency, Versatile and Space Tolerant Point Of Load

T Chapelet, M Carbone, S Prévot… - 2023 European Data …, 2023 - ieeexplore.ieee.org
ADS SpE Fr High Efficiency, Versatile and Space Tolerant Point Of Load Page 1 ©2023 ADS
SpE Fr High Efficiency, Versatile and Space Tolerant Point Of Load Tony Chapelet dept. of …

High power transmitters for q/v-band communications-beyond alphasat

N Deo - 2019 IEEE Aerospace Conference, 2019 - ieeexplore.ieee.org
Since the delivery of the Q-band Solid-State Power Amplifiers (SSPA) for Alphasat TDP5 in
2012 and their successful operation in space for over 5 years, very significant advances …

Microbeam SEE analysis of MIM capacitors for GaN amplifiers

P Kupsc, A Javanainen, V Ferlet-Cavrois… - … on Nuclear Science, 2018 - ieeexplore.ieee.org
Broad-beam and microbeam single-event effect tests were performed on metal–insulator–
metal capacitors with three different thicknesses of silicon nitride (Si 3 N 4) dielectric …

[PDF][PDF] Investigating the Test and Evaluation of GaN Transistors Radiation Resistance in SSPA Amplifier Board in LEO Satellite Payload

RK Baee, H Daneshvar, AH Ahmadi, P Sojoodi - 2023 - sid.ir
With the advent of gallium nitride (GaN) technology, achieving microwave power with high
efficiency by solid-state devices has become more and more available. Therefore, the use of …

بررسی آزمون و ارزیابی مقاومت تشعشعی TID ترانزیستورهای GaN در برد تقویت کننده SSPA جهت بکارگیری در محموله ماهواره LEO

کریم زاده بائی رقیه, دانشور حمیده, احمدی امیرحسین… - 2023‎ - sid.ir
با ظهور فناوری GaN, دست یابی به توان مایکروویو با استفاده از ادوات حالت جامد و با بازدهی بالا,
بیش از پیش میسر شده است. لذا استفاده از تقویت کننده های SSPA با فناوری GaN در ماهواره ها به …

Linealización de amplificadores de potencia de alto rendimiento sobre tecnología GaN mediante técnicas EER/ET

D Tena Ramos - 2020 - oa.upm.es
Los nuevos sistemas de comunicaciones evolucionan con el paso del tiempo hacia
esquemas de modulación más complejos con el fin de incrementar la tasa de transmisión …

Design of a radiation hardened PWM controller built on SOI

E Kılıç - 2018 - open.metu.edu.tr
Design of efficient and compact switch-mode power supplies (SMPS) is a popular topic in
power electronics. Silicon has been used as semiconductor material of switches in DCDC …

[PDF][PDF] 실용위성 적용을 위한 GaN 기반 TR 모듈 설계 기법

양호준, 이유리, 조성민, 유경덕… - J. Korean Soc. Aeronaut …, 2022 - koreascience.kr
초 록위성용 TR 모듈이 지상용 또는 항공용 TR 모듈과 다른 점은 높은 레벨의 진동, 충격과
같은발사환경과 우주방사능, 진공, 온도 변화와 같은 궤도환경 고려가 필요하다는 것이다 …