A comprehensive review on emerging artificial neuromorphic devices
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
This review article attempts to provide a comprehensive review of the recent progress in the
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …
Conduction mechanism of valence change resistive switching memory: a survey
Resistive switching effect in transition metal oxide (TMO) based material is often associated
with the valence change mechanism (VCM). Typical modeling of valence change resistive …
with the valence change mechanism (VCM). Typical modeling of valence change resistive …
Flexible artificial sensory systems based on neuromorphic devices
Emerging flexible artificial sensory systems using neuromorphic electronics have been
considered as a promising solution for processing massive data with low power …
considered as a promising solution for processing massive data with low power …
Resistive random access memory (ReRAM) based on metal oxides
H Akinaga, H Shima - Proceedings of the IEEE, 2010 - ieeexplore.ieee.org
In this paper, we review the recent progress in the resistive random access memory
(ReRAM) technology, one of the most promising emerging nonvolatile memories, in which …
(ReRAM) technology, one of the most promising emerging nonvolatile memories, in which …
Oxide-based resistive switching-based devices: fabrication, influence parameters and applications
In advanced computing technologies, metal oxide-based resistive switching random access
memory (RRAM) has been considered an excellent scientific research interest in the areas …
memory (RRAM) has been considered an excellent scientific research interest in the areas …
Resistive switching performance improvement via modulating nanoscale conductive filament, involving the application of two‐dimensional layered materials
Reversible chemical and structural changes induced by ionic motion and reaction in
response to electrical stimuli leads to resistive switching effects in metal‐insulator‐metal …
response to electrical stimuli leads to resistive switching effects in metal‐insulator‐metal …
Multi-level, forming and filament free, bulk switching trilayer RRAM for neuromorphic computing at the edge
CMOS-RRAM integration holds great promise for low energy and high throughput
neuromorphic computing. However, most RRAM technologies relying on filamentary …
neuromorphic computing. However, most RRAM technologies relying on filamentary …
Zinc oxide and indium-gallium-zinc-oxide bi-layer synaptic device with highly linear long-term potentiation and depression characteristics
HW Choi, KW Song, SH Kim, KT Nguyen, SB Eadi… - Scientific reports, 2022 - nature.com
The electrical properties, resistive switching behavior, and long-term potentiation/depression
(LTP/LTD) in a single indium-gallium-zinc-oxide (IGZO) and bi-layer IGZO/ZnO (ZnO: zinc …
(LTP/LTD) in a single indium-gallium-zinc-oxide (IGZO) and bi-layer IGZO/ZnO (ZnO: zinc …
Transformation of rust iron into a sustainable product for applications in the electronic, energy, biomedical, and environment fields: Towards a multitasking approach
Utilization of waste material for value-added applications is a sustainable approach towards
reduction of global waste. Herein, the waste rust iron is transformed into useful Fe 2 O 3 …
reduction of global waste. Herein, the waste rust iron is transformed into useful Fe 2 O 3 …