Flexible optoelectronics have attracted much attention in recent years for their potential
applications in healthcare and wearable devices. Narrow bandgap (NBG) semiconductor …

(Si) GeSn semiconductors are finally coming of age after a long gestation period. The
demonstration of device-quality epi-layers and quantum-engineered heterostructures has …

Silicon photonics continues to progress tremendously, both in near-infrared
datacom/telecoms and in mid-IR optical sensing, despite the fact a monolithically integrated …

GeSn and SiGeSn are promising materials for the fabrication of a group IV laser source
offering a number of design options from bulk to heterostructures and quantum wells. Here …

Heterostructures based on the GeSn nanocompound have high impact on integrated
photonics devices. The promising feature of GeSn nanostructures is its direct bandgap …

The simultaneous control of lattice strain, composition, and microstructure is crucial to
establish high-quality, direct bandgap GeSn semiconductors. Herein, we demonstrate that …

Germanium-on-silicon waveguides were modeled, fabricated and characterized at
wavelengths ranging from 7.5 to 11 µm. Measured waveguide losses are below 5 dB/cm for …

In recent years much effort has been made to increase the Sn content in GeSn alloys in
order to increase direct bandgap charge carrier recombination and, therefore, to reach room …

Abstract Germanium-on-silicon (Ge-on-Si) based single-photon avalanche diodes (SPADs)
have recently emerged as a promising detector candidate for ultra-sensitive and picosecond …

GeSn alloys offer a promising route towards a CMOS compatible light source and the
realization of electronic-photonic integrated circuits. One tactic to improve the lasing …