A Sub-1 V Capacitively Biased BJT-Based Temperature Sensor With an Inaccuracy of±0.15° C (3σ) From—55° C to 125° C

Z Tang, S Pan, M Grubor… - IEEE Journal of Solid …, 2023 - ieeexplore.ieee.org
This article presents a sub-1 V bipolar junction transistor (BJT)-based temperature sensor
that achieves both high accuracy and high energy efficiency. To avoid the extra headroom …

23.5 a sub-1v 810nw capacitively-biased bjt-based temperature sensor with an inaccuracy of±0.15° c (3σ) from− 55° c to 125° c

Z Tang, S Pan, KAA Makinwa - 2023 IEEE International Solid …, 2023 - ieeexplore.ieee.org
BJT-based temperature sensors are widely used because they can achieve excellent
accuracy after 1-point calibration. However, they typically dissipate μWs of power and …

A Sub-1 V 90 dB-SNDR Power/BW Scalable DTDSM Using Low-Voltage Cascoded Floating Inverter Amplifiers in 130 nm CMOS

X Wu, Y Liu, Z Zhu, X Yu, NN Tan… - IEEE Transactions on …, 2025 - ieeexplore.ieee.org
This paper presents a sub-1V delta-sigma modulator (DSM) with power and bandwidth (BW)
scalability for IoT applications. It is built around a fully dynamic and low-voltage floating …

A 12-/13.56-MHz Crystal Oscillator With Binary-Search-Assisted Two-Step Injection Achieving 5.0-nJ Startup Energy and 45.8-μs Startup Time

H Li, KM Lei, RP Martins, PI Mak - IEEE Journal of Solid-State …, 2023 - ieeexplore.ieee.org
This article reports a 12-/13.56-MHz fast-and-energy-efficient startup crystal oscillator (XO)
featuring a binary-search-assisted two-step injection technique for ultralow-power duty …

A 0.8-V BJT-Based Temperature Sensor With an Inaccuracy of 0.4 C (3) From 40 C to 125 C in 22-nm CMOS

Z Tang, XP Yu, KAA Makinwa… - IEEE Journal of Solid …, 2025 - ieeexplore.ieee.org
This article presents a compact sub-1-V bipolar junction transistor (BJT)-based temperature
sensor for thermal management applications. To operate from a sub-1-V supply, two …

A 14-b BW/Power Scalable Sensor Interface With a Dynamic Bandgap Reference

Z Tang, Y Liu, P Chen, H Wang, XP Yu… - IEEE Journal of Solid …, 2024 - ieeexplore.ieee.org
This article presents a 14-bit fully dynamic sensor interface that consists of a switched-
capacitor (SC) modulator and a dynamic bandgap reference (BGR). The BGR is …

An ultra-low power dissipation CMOS temperature sensor with an inaccuracy of±0.15° C (3δ) from− 40° C to 125° C

Y Liu, S Fang, L Wang, Y Wang - Integration, 2023 - Elsevier
An ultra-low power, high accuracy BJT-based CMOS temperature sensor is presented in this
paper. The temperature sensor consists of analog front end (AFE) and hybrid ADC. In AFE …

CMOS Temperature Sensors: From Module Design to System Design

Z Tang, XP Yu, Z Shi, NN Tan - Chinese Journal of Electronics, 2025 - ieeexplore.ieee.org
In a smart complementary metal-oxide semiconductor (CMOS) temperature sensor, the
temperature information is converted to an electrical signal, such as voltage, current, or time …

[HTML][HTML] Simplifying complex digital sequential circuit by an innovative mixed-signal circuit alternative

S Binzaid, A Divi, M Rokonuzzaman - Computers and Electrical …, 2024 - Elsevier
This research paper presents an innovative circuit design of a Next Clock Auto-Generator
(NCA). A sequential analog circuit designed to produce a digital pulse for triggering digital …

A One-Point-Trimmed 18.4 ppm/° C On-Chip Oscillator with Capacitively-Biased-Diode-based Quasi-Digital Temperature Compensation

Y Kuang, Y Chen, T Cai, Q Zhang… - … on Circuits and …, 2024 - ieeexplore.ieee.org
On-chip oscillators are suitable for low-cost and compact IoT applications, but their
temperature stability is relatively poor. This paper presents a temperature compensation …