This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …

In recent years, silicon‐based room temperature Terahertz (THz) detectors have become the
most optimistic research area because of their high speed, low cost, and unimpeded …

With the development of single-atom transistors, consisting of single dopants,
nanofabrication has reached an extreme level of miniaturization. Promising functionalities …

Silicon field-effect transistors have now reached gate lengths of only a few tens of
nanometers, containing a countable number of dopants in the channel. Such technological …

Silicon (Si) nano-electronics is advancing towards the end of the Moore's Law, as gate
lengths of just a few nanometers have been already reported in state-of-the-art transistors. In …

Individual dopant atoms in silicon devices gain active roles as channel dimensions move
into the nanoscale. A single donor can work as an atomic quantum dot, mediating single …

Donor‐atom‐based nano‐devices in silicon represent a breakthrough for individual control
of electrons at atomic scale. Here, a finite‐bias characterization of electrical transport …

The impact of dopant atoms in transistor functionality has significantly changed over the past
few decades. In downscaled transistors, discrete dopants with uncontrolled positions and …

Quantum dots formed by donor-atoms in Si nanodevices can provide a breakthrough for
functionality at the atomic level with one-by-one control of electrons. However, single …

We present a combined experimental–theoretical demonstration of the energy spectrum and
exchange coupling of an isolated donor pair in a silicon nanotransistor. The molecular …