Among the emerging memories, resistive switching (RS) based resistive random-access
memories (RRAMs) are attracting lots of attention due to their simple metal–insulator–metal …

A recent trend in the development of high mass consumption electron devices is towards
electronic textiles (e-textiles), smart wearable devices, smart clothes, and flexible or …

Resistive Switching in oxides has offered new opportunities for develo** resistive random
access memory (ReRAM) devices. Here we demonstrated bipolar Resistive Switching along …

Halide perovskites have attracted surge of interest in the memristor field due to their superior
electrical property and corresponding remarkable device performances. However, the …

The bipolar resistive switching (BRS) phenomenon was demonstrated in Mn 3 O 4 using an
aluminium/Mn 3 O 4/fluorine-doped tin oxide resistive random access memory (RRAM) …

Flexible electronic devices have received great attention in the fields of foldable electronic
devices, wearable electronic devices, displays, actuators, synaptic bionics and so on …

In this article, the effects of active Ag electrodes on the ROFF/RON ratio, SET/RESET
voltages, and endurance characteristics of a sol-gel TiO x resistive memory are investigated …

We demonstrate a metal-oxide-semiconductor based nonvolatile memory element structure
with a single isolated gold nanoparticle (Au-NP) acting as the storage site. The Au-NPs are …

Amorphous indium-gallium-zinc oxide (IGZO) is one of the most promising oxide
semiconductors for thin-film transistors and it has started to replace amorphous silicon in …

We demonstrate the hybrid fabrication process of a graphene integrated highly transparent
resistive random-access memory (TRRAM) device. The indium tin oxide (ITO)/Al 2 O …