GaN-based power high-electron-mobility transistors on Si substrates: From materials to devices

N Wu, Z ** in Al-rich AlGaN and AlN
B Sarkar, S Washiyama, MH Breckenridge… - ECS …, 2018 - iopscience.iop.org
Attaining a high conductivity in both p-type and n-type Al-rich AlGaN epitaxial films is
necessary for highly efficient deep-UV emitters. While reliable n-type conductivity has been …

Large‐Area, Solar‐Blind, Sub‐250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates

P Reddy, W Mecouch… - physica status solidi …, 2022 - Wiley Online Library
Herein, Al‐rich AlGaN‐based avalanche photodiodes (APDs) grown on single crystal AlN
substrates high ultraviolet‐C sensitivity for λ< 200 nm are fabricated, while exhibiting …

Exploring the adsorption of CO toxic gas on pristine and M-doped (M= Ti, Cr, Fe, Ni and Zn) GaN nanosheets

H Roohi, NA Ardehjani - New Journal of Chemistry, 2019 - pubs.rsc.org
The capability of pristine and M-doped (M= Ti, Cr, Fe, Ni and Zn) gallium nitride nanosheets
(M-GaNNS) was explored at the Grimme-corrected PBE/double numerical plus polarization …

Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga2O3 Interface

LAM Lyle, SD House, JC Yang… - ACS Applied Electronic …, 2022 - ACS Publications
Au/β-Ga2O3 Schottky contacts deposited at room temperature via electron-beam
evaporation are characterized electrically with current density–voltage (J–V) and …

Theoretical investigation of nitric oxide adsorption on the surface of pure and metal (Ti, Cr, Fe, Ni and Zn) doped gallium nitride nanosheets

H Roohi, NA Ardehjani - Physica E: Low-Dimensional Systems and …, 2020 - Elsevier
In this work, the electronic properties of gallium nitride nanosheets (GaNNSs) as a
semiconductor can be tuned by transition metals (TM= Ti, Cr, Fe, Ni and Zn) do** for …