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GaN-based power high-electron-mobility transistors on Si substrates: From materials to devices
N Wu, Z ** in Al-rich AlGaN and AlN
B Sarkar, S Washiyama, MH Breckenridge… - ECS …, 2018 - iopscience.iop.org
Attaining a high conductivity in both p-type and n-type Al-rich AlGaN epitaxial films is
necessary for highly efficient deep-UV emitters. While reliable n-type conductivity has been …
necessary for highly efficient deep-UV emitters. While reliable n-type conductivity has been …
Large‐Area, Solar‐Blind, Sub‐250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates
P Reddy, W Mecouch… - physica status solidi …, 2022 - Wiley Online Library
Herein, Al‐rich AlGaN‐based avalanche photodiodes (APDs) grown on single crystal AlN
substrates high ultraviolet‐C sensitivity for λ< 200 nm are fabricated, while exhibiting …
substrates high ultraviolet‐C sensitivity for λ< 200 nm are fabricated, while exhibiting …
Exploring the adsorption of CO toxic gas on pristine and M-doped (M= Ti, Cr, Fe, Ni and Zn) GaN nanosheets
The capability of pristine and M-doped (M= Ti, Cr, Fe, Ni and Zn) gallium nitride nanosheets
(M-GaNNS) was explored at the Grimme-corrected PBE/double numerical plus polarization …
(M-GaNNS) was explored at the Grimme-corrected PBE/double numerical plus polarization …
Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga2O3 Interface
Au/β-Ga2O3 Schottky contacts deposited at room temperature via electron-beam
evaporation are characterized electrically with current density–voltage (J–V) and …
evaporation are characterized electrically with current density–voltage (J–V) and …
Theoretical investigation of nitric oxide adsorption on the surface of pure and metal (Ti, Cr, Fe, Ni and Zn) doped gallium nitride nanosheets
In this work, the electronic properties of gallium nitride nanosheets (GaNNSs) as a
semiconductor can be tuned by transition metals (TM= Ti, Cr, Fe, Ni and Zn) do** for …
semiconductor can be tuned by transition metals (TM= Ti, Cr, Fe, Ni and Zn) do** for …