Using photovoltage (PV) spectroscopy we analyse the electronic structure of a series of
GaBi x As {} 1-x/(Al) GaAs dilute bismide quantum well (QW) laser structures. The use of …

Critical point transition energies and optical functions of the novel GaAs-based dilute
bismide alloys GaAsBi, GaNAsBi, and GaPAsBi were determined using spectroscopic …

The effect of interface intermixing in W-design GaSb/AlSb/InAs/Ga 0.665 In 0.335 As x Sb 1−
x/InAs/AlSb/GaSb quantum wells (QWs) has been investigated by means of optical …

Optical properties of molecular beam epitaxially grown type II “W” shaped
GaSb/AlSb/InAs/GaIn (As) Sb/InAs/AlSb/GaSb quantum wells (QWs) designed for the active …

The optical properties of GaAsN system alloys have not been clarified, particularly for the
localized level around the bottom of the conduction band induced by nitrogen atoms. Herein …

We investigate the electric field effect on the ground state (GS), the first-excited state (FES)
and the excitation energies of a strong-coupled polaron in an asymmetric Gaussian potential …

InGaAs and GaNAs were selected as components of a multiple quantum well (MQW) with a
free-barrier conduction band (FB-CB) in which the quantum confinement for electrons was …

By a combination method of Lee–Low–Pines unitary transformation method and Pekar-type
variational method, the ground state energy (GSE) of the bound polaron is studied in the …

Charge transfer excitons are studied in double quantum well structures consisting of a
(GaIn) As and a Ga (NAs) layer separated by a GaAs film of variable thickness. With …

We investigate the optical transitions of GaN x As 1− x quantum wells (QWs) embedded in
wider band gap AlGaAs. A combination of absorption and emission spectroscopic …