Band parameters for nitrogen-containing semiconductors
We present a comprehensive and up-to-date compilation of band parameters for all of the
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …
[BOOK][B] Handbook of nitride semiconductors and devices, Materials Properties, Physics and Growth
H Morkoį - 2009 - books.google.com
The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
Band engineering in dilute nitride and bismide semiconductor lasers
Highly mismatched semiconductor alloys such as GaN x As 1− x and GaBi x As 1− x have
several novel electronic properties, including a rapid reduction in energy gap with …
several novel electronic properties, including a rapid reduction in energy gap with …
Nanostructures and methods for manufacturing the same
5,362.972 A 1 1/1994 Yazawa et al......... 257.13 electronic, photonic structures, and
electromechanical 5,381,753 A 1/1995 Okajima et al............... 117/12 MEMS devices, are …
electromechanical 5,381,753 A 1/1995 Okajima et al............... 117/12 MEMS devices, are …
Nanoelectronic structure and method of producing such
The present invention relates to semiconductor devices comprising semiconductor
nanoelements. In particular the invention relates to devices having a volume element having …
nanoelements. In particular the invention relates to devices having a volume element having …
LED with upstanding nanowire structure and method of producing such
The present invention relates to light emitting diodes, LEDs. In particular the invention
relates to a LED comprising a nanowire as an active component. The nanostructured LED …
relates to a LED comprising a nanowire as an active component. The nanostructured LED …
Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them
A nanoengineered structure comprising an array of more than about 1000 nanowhiskers on
a substrate in a predetermined spatial configuration, for use for example as a photonic band …
a substrate in a predetermined spatial configuration, for use for example as a photonic band …
Formation of nanowhiskers on a substrate of dissimilar material
LI Samuelson, TMI Martensson - US Patent 7,528,002, 2009 - Google Patents
(57) ABSTRACT A method for forming a nanowhisker of, eg, a III-V semi conductor material
on a silicon Substrate, comprises: prepar ing a Surface of the silicon Substrate with …
on a silicon Substrate, comprises: prepar ing a Surface of the silicon Substrate with …
Alloying of GaNxAs1− x with InNxAs1− x: A simple formula for the band gap parametrization of Ga1− yInyNxAs1− x alloys
R Kudrawiec - Journal of applied physics, 2007 - pubs.aip.org
Alloying of GaNxAs1−x with InNxAs1−x: A simple formula for the band gap parametrization
of Ga1−yInyNxAs1−x alloys | Journal of Applied Physics | AIP Publishing Skip to Main Content …
of Ga1−yInyNxAs1−x alloys | Journal of Applied Physics | AIP Publishing Skip to Main Content …
Magneto-optical and light-emission properties of III–As–N semiconductors
A brief review on our present knowledge of optical and magneto-optical properties of III–V–N
alloys, in particular, Ga (In) NAs alloys with low nitrogen compositions is given. The main …
alloys, in particular, Ga (In) NAs alloys with low nitrogen compositions is given. The main …