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Power electronics based on wide-bandgap semiconductors: Opportunities and challenges
The expansion of the electric vehicle market is driving the request for efficient and reliable
power electronic systems for electric energy conversion and processing. The efficiency, size …
power electronic systems for electric energy conversion and processing. The efficiency, size …
LLC resonant converter topologies and industrial applications—A review
Owing to the advantages of high efficiency, high energy density, electrical isolation, low
electromagnetic interference (EMI) and harmonic pollution, magnetic integration, wide …
electromagnetic interference (EMI) and harmonic pollution, magnetic integration, wide …
[HTML][HTML] Review of the recent progress on GaN-based vertical power Schottky barrier diodes (SBDs)
Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated
outstanding features in high-frequency and high-power applications. This paper reviews …
outstanding features in high-frequency and high-power applications. This paper reviews …
Role of threshold voltage shift in highly accelerated power cycling tests for SiC MOSFET modules
In silicon carbide (SiC) power MOSFETs, threshold voltage instability under high-
temperature conditions has potential reliability threats to long-term operation. In this paper …
temperature conditions has potential reliability threats to long-term operation. In this paper …
Quantified density of performance-degrading near-interface traps in SiC MOSFETs
Abstract Characterization of near-interface traps (NITs) in commercial SiC metal–oxide–
semiconductor field-effect transistors (MOSFETs) is essential because they adversely impact …
semiconductor field-effect transistors (MOSFETs) is essential because they adversely impact …
[HTML][HTML] Leakage and breakdown mechanisms of GaN vertical power FinFETs
This work studies the leakage and breakdown mechanisms of 1.2 kV GaN vertical power
FinFETs with edge termination. Two competing leakage and breakdown mechanisms have …
FinFETs with edge termination. Two competing leakage and breakdown mechanisms have …
Active defects in MOS devices on 4H-SiC: A critical review
The state-of-the-art 4H-SiC MOSFETs still suffer from performance (low channel-carrier
mobility and high threshold voltage) and reliability (threshold voltage instability) issues …
mobility and high threshold voltage) and reliability (threshold voltage instability) issues …
Bias temperature instability in SiC metal oxide semiconductor devices
C Yang, S Wei, D Wang - Journal of physics D: applied physics, 2021 - iopscience.iop.org
Although silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs)
are commercially available, bias temperature instability (BTI) defined as shifts in V th in SiC …
are commercially available, bias temperature instability (BTI) defined as shifts in V th in SiC …
[HTML][HTML] Analysis of the reverse IV characteristics of diamond-based PIN diodes
Diamond is one of the most promising candidates for high power and high temperature
applications, due to its large bandgap and high thermal conductivity. As a result of the …
applications, due to its large bandgap and high thermal conductivity. As a result of the …
Single β-Ga2O3 nanowire based lateral FinFET on Si
A fin field-effect transistor (FinFET) based on single β-Ga 2 O 3 nanowire with a diameter
of∼ 60 nm transferred to Si substrate is demonstrated. The FinFET device shows good …
of∼ 60 nm transferred to Si substrate is demonstrated. The FinFET device shows good …