We have presented improvement in the internal quantum efficiency (IQE) for deep-ultraviolet
(DUV) AlGaN-based multi-quantum well (MQW) light-emitting diodes (LEDs) by …

Featured Application Advanced infrared, visible, and ultraviolet light emitters. Abstract III-
Nitride short period superlattices (SPSLs), whose period does not exceed~ 2 nm (~ 8 …

AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) generally employ an
electron blocking layer (EBL) to suppress electron leakage. However, the EBL can also …

A deep ultraviolet light-emitting diode (DUV LED) consisting of a specifically designed
intermediate p-type region involving a superlattice quaternary nitride alloy has been …

In this paper, an extensive study is carried out via theoretical simulation to determine the
electrical and optical characteristics of AlGaN based multi-quantum well near-ultra violet …

The efficiency performance of AlGaN-based deep ultraviolet light-emitting diodes (DUV
LEDs) is restricted by the poor hole injection and severe electron leakage. Here, we propose …

The efficiency performance of AlGaN-based deep ultraviolet light-emitting diodes (DUV
LEDs) suffers from the strong polarization effect in multiple quantum wells (MQWs). Here, we …

We have envisaged and designed a novel III-V nitride based deep ultraviolet light emitting
diode (LED) with reasonably high efficiency at higher current density using a double-side …

Although great progress has been made in InGaN/AlGaN ultraviolet light-emitting diodes
(UV LEDs), their quantum efficiency is still suffering from severe electron leakage and poor …

In this paper, we significantly improved the internal quantum efficiency and output power of
AlGaN-based deep UV (DUV) LEDs by replacing the conventional p-AlGaN electron …