Ion implantation in silicon with doses below the amorphization threshold can lead to the
formation of dislocations after high-temperature annealing. We have studied this for implants …

The implant species and dose effects of ion implantation, including crossing the
amorphization threshold, on the transient enhanced diffusion (TED) behavior of a boron …

Reduction of the transient diffusion of B, implanted in Si along [100] at 10 keV to a dose of 1×
1013/cm2, after annealing at 900° C for 10 s has been observed in samples irradiated with …

As a particularly important p-type dopant, boron exhibits some problematical phenomena
during the fabrication of microelectronic devices, especially transient enhanced diffusion …

In this paper we have studied the diffusion of boron in silicon after high-dose implantation
(50 keV, 5× 10 15 ions cm 2) and during rapid thermal annealing at 1100° C, under nitrogen …

Transient tail diffusion of boron in Si (100) has been investigated as a function of boron
implant condition, dose, energy, time, temperature and silicon or germanium post …

High-resolution X-ray diffraction (HR-XRD) was investigated as a possible technique for the
qualitative analysis of damage annealing of low-dose, high-energy implanted (001) silicon …

Shallower carrier concentration profiles in 50 keV P+‐implanted Si (100) after annealing at
1000° C for 1 h have been observed when a buried amorphous layer was formed by an …

The gettering effects of ion‐beam defect engineering (IBDE) in BF2‐implanted silicon have
been studied. It has been shown that the IBDE technique may be useful in the improvement …

The tight-binding (TB) method in conjunction with atomic-scale computer simulation
methods is used to study boron and boron-defect clusters containing up to five boron atoms …