Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque
MRAM and next-generation spin–orbit torque MRAM, are emerging as key to enabling low …

Abstract Two-dimensional (2D) ferromagnetic materials with unique magnetic properties
have great potential for next-generation spintronic devices with high flexibility, easy …

Topological electronic materials, such as topological insulators, are distinct from trivial
materials in the topology of their electronic band structures that lead to robust …

Spin–orbit torque (SOT) is an emerging technology that enables the efficient manipulation of
spintronic devices. The initial processes of interest in SOTs involved electric fields, spin …

Abstract 2D materials are attractive for nanoelectronics due to their ultimate thickness
dimension and unique physical properties. A wide variety of emerging spintronic device …

The importance of global band topology is unequivocally recognized in condensed matter
physics, and new states of matter, such as topological insulators, have been discovered …

Spin-orbit coupling in inversion-asymmetric magnetic crystals and structures has emerged
as a powerful tool to generate complex magnetic textures, interconvert charge and spin …

The scaling of complementary metal–oxide–semiconductor (CMOS) technology is
increasingly challenging, but demand for low-power data storage and processing continues …

Current-induced spin-orbit torque (SOT) is attracting increasing interest and exciting
significant research activity. We aim to provide a comprehensive review of recent progress in …

The spin–orbit torque (SOT) that arises from materials with large spin–orbit coupling
promises a path for ultralow power and fast magnetic-based storage and computational …