Abstract Beta-Gallium oxide (β-Ga 2 O 3) has emerged as a very feasible semiconductor
material for new explorations, thanks to its advantages of ultra-wide bandgap and diverse …

As a promising ultra-wide bandgap (UWBG) semiconductor, gallium oxide (Ga 2 O 3) has
recently aroused increasing attention in the area for high-power electronics, power switch for …

Here, we propose a p-type copper aluminum oxide (p-CuAlO 2) interlayer for the high
breakdown and low leakage current of β-Ga 2 O 3 Schottky barrier diodes (SBDs). The XPS …

In the last three decades, study has seen the evolution of metal oxide semiconductor (MOS)
devices as device geometries have shrunk in line with Moore's law. This device shrunk …

Atomic layer deposited HfO 2 is a primary candidate for metal–oxide–semiconductor (MOS)
power devices based on the ultra-wide bandgap semiconductor β-Ga 2 O 3. Here, we …

In this study, we have fabricated a high-performance SiO 2/β-Ga 2 O 3 (001) MIS capacitor
and investigated the effect of low-temperature post-deposition annealing (PDA) on its …

We report the comparison of the atomic layer deposited polycrystalline (p-)/amorphous (a-)
HfO 2 bilayer gate dielectric with p-HfO 2/a-Al 2 O 3 for enhanced β-Ga 2 O 3 metal oxide …

The behavior of phenol was s tudied and determined using the modified carbon pa s te
electrode (MCPE) with nickel oxide nanoparticles doped by nitrogen carbon quantum dots …

High performance β–Ga 2 O 3 trench Schottky barrier diodes (SBDs) were demonstrated
with the employment of a novel etching technique called self-reactive etching (SRE). Owing …

The quest for indium-free transparent conductive electrodes with enhanced optical band
gaps and superior electrical conductivity is imperative for the advancement of flexible …