We review and critique the recent developments on multifunctional oxide materials, which
are gaining a good deal of interest. Recongnizing that this is a vast area, the focus of this …

With scaling of the gate length downward to increase speed and density, the gate dielectric
thickness must also be reduced. However, this practice which has been in effect for many …

This paper introduces a growth method—suboxide molecular-beam epitaxy (S-MBE)—
which enables a drastic enhancement in the growth rates of Ga 2 O 3 and related materials …

We have conducted a comprehensive thermodynamic analysis of the volatility of 128 binary
oxides to evaluate their suitability as source materials for oxide molecular-beam epitaxy …

Trioxide compounds of the critical rare earth elements Eu and Nd were characterized using
x-ray photoelectron spectroscopy after heating to remove surface carbonate and greatly …

To realize an improved sustainable future, additional developments in the energy
consumption is a prerequisite important aspect for the operation of any electronic device …

The Nd and C codoped TiO2 (Nd-C-TiO2) samples were successfully prepared by a facile
calcination assisted solvothermal reaction without any addition of other C precursors except …

The ability to integrate crystalline metal oxide dielectric barrier layers into silicon structures
can open the way for a variety of novel applications which enhances the functionality and …

La-doped BaSnO 3 has been epitaxially integrated with (001) Si using an SrTiO 3 buffer
layer via molecular-beam epitaxy (MBE). A 254 nm thick undoped BaSnO 3 buffer layer was …

Methods and devices for a dielectric are provided. One method embodiment includes
forming a passivation layer on a Substrate, wherein the passivation layer contains a compo …