Solid state quantum computer development in silicon with single ion implantation
Spawned by the finding of efficient quantum algorithms, the development of a scalable
quantum computer has emerged as a premiere challenge for nanoscience and …
quantum computer has emerged as a premiere challenge for nanoscience and …
Research on the Evolution of Defects Initiation and the Diffusion of Dopant on the Si/SiO2 Interface
Y Yang, D Chen, D Li, T Zhao, W Zhang… - Advanced Materials …, 2024 - Wiley Online Library
Si/SiO2 interfaces, important parts of Si‐based devices, significantly influence the
performance of Si‐based devices. However, owing to the impact of the external …
performance of Si‐based devices. However, owing to the impact of the external …
Phosphorus do** of Si nanocrystals embedded in silicon oxynitride determined by atom probe tomography
H Gnaser, S Gutsch, M Wahl, R Schiller… - Journal of Applied …, 2014 - pubs.aip.org
Silicon nanocrystals (SiNCs) embedded in a silicon oxide matrix were studied by 3D atom
probe tomography (APT). The distribution of the SiNC diameter was found to have a mean …
probe tomography (APT). The distribution of the SiNC diameter was found to have a mean …
Electrical activation and electron spin coherence of ultralow dose antimony implants in silicon
We implanted ultralow doses (2× 10 11 cm− 2) of antimony ions (Sb 121) into isotopically
enriched silicon (Si 28) and find high degrees of electrical activation and low levels of …
enriched silicon (Si 28) and find high degrees of electrical activation and low levels of …
Revealing the factors influencing grain boundary segregation of P, As in Si: Insights from first-principles
Phosphorous (P) and arsenic (As) segregation at grain boundaries (GBs) usually deteriorate
the electrical performance of n-type doped Si-wafers. In order to probe the factors …
the electrical performance of n-type doped Si-wafers. In order to probe the factors …
[HTML][HTML] Fabrication Techniques for a Tuneable Room Temperature Hybrid Single-electron Transistor and Field-effect Transistor
Hybrid room-temperature (RT) silicon single-electron–field effect transistors (SET-FETs)
provide a means to switch between 'classical', high current FET, and low-power SET …
provide a means to switch between 'classical', high current FET, and low-power SET …
Small tungsten carbide nanoparticles: Simulation of structure, energetics, and tensile strength
VG Zavodinsky - International Journal of Refractory Metals and Hard …, 2010 - Elsevier
Ab initio methods of the density functional theory and pseudopotentials were used to study
the structure, electronic states, total energy and tensile strength of WC nanoparticles. It has …
the structure, electronic states, total energy and tensile strength of WC nanoparticles. It has …
Front-end process modeling in silicon
Front-end processing mostly deals with technologies associated to junction formation in
semiconductor devices. Ion implantation and thermal anneal models are key to predict …
semiconductor devices. Ion implantation and thermal anneal models are key to predict …
Arsenic uphill diffusion during shallow junction formation
The behavior during annealing of low-energy As-implanted Si have been investigated by
comparing secondary ion mass spectrometry (SIMS) and simulated profiles. Z-contrast …
comparing secondary ion mass spectrometry (SIMS) and simulated profiles. Z-contrast …
Detection of interface states in an elastic plate using laser ultrasonic technology
RF Zhang, R Ban, YX Fan, ZY Tao - Applied Acoustics, 2024 - Elsevier
An interface state of elastic waves in mirror-symmetric structured waveguides has been
detected using laser ultrasonic technology. In antisymmetric periodic waveguides, the …
detected using laser ultrasonic technology. In antisymmetric periodic waveguides, the …