When group-III nitrides go infrared: New properties and perspectives
J Wu - Journal of applied physics, 2009 - pubs.aip.org
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …
Recent advances in the MOVPE growth of indium nitride
Since a few years, indium nitride promising properties for device applications have attracted
much attention worldwide. Huge efforts are dedicated to optimize indium nitride growth …
much attention worldwide. Huge efforts are dedicated to optimize indium nitride growth …
Analysis of InGaN-delta-InN quantum wells for light-emitting diodes
The design of InGaN-delta-InN quantum wells (QWs) leads to significant redshift for nitride
active region with large electron-hole wave function overlap (Γ e _ hh) and spontaneous …
active region with large electron-hole wave function overlap (Γ e _ hh) and spontaneous …
III-nitride photonics
The progress in III-Nitride photonics research in 2009 is reviewed. The III-Nitride photonics
research is a very active field with many important applications in the areas of energy …
research is a very active field with many important applications in the areas of energy …
Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition
Thermoelectric properties of lattice-matched AlInN grown by metal organic chemical vapor
deposition were measured and analyzed. The n-type Al 0.83 In 0.17 N alloy exhibited …
deposition were measured and analyzed. The n-type Al 0.83 In 0.17 N alloy exhibited …
Characterizations of Seebeck coefficients and thermoelectric figures of merit for AlInN alloys with various In-contents
Thermoelectric properties of AlInN alloys, grown by metalorganic vapor phase epitaxy
(MOVPE), with In-contents (x) from 11% up to 21.34% were characterized and analyzed at …
(MOVPE), with In-contents (x) from 11% up to 21.34% were characterized and analyzed at …
Engineering of InN epilayers by repeated deposition of ultrathin layers in pulsed MOCVD growth
J Mickevičius, D Dobrovolskas, T Steponavičius… - Applied Surface …, 2018 - Elsevier
Capabilities of repeated deposition of ultrathin layers by pulsed metalorganic chemical
vapor deposition (MOCVD) for improvement of structural and luminescence properties of InN …
vapor deposition (MOCVD) for improvement of structural and luminescence properties of InN …
Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77 eV) InN grown on GaN/sapphire using pulsed MOVPE
In this study, we report on the pulsed metalorganic vapor phase epitaxy (MOVPE) of InN as
well as the optical and electronic properties of the films as a function of V/III ratio and growth …
well as the optical and electronic properties of the films as a function of V/III ratio and growth …
Growth of InN and In-rich InGaN layers on GaN templates by pulsed metalorganic chemical vapor deposition
Abstract InN and In-rich InGaN layers have been grown on GaN templates using the pulsed
metalorganic chemical vapor deposition (MOCVD) technique and compared with analogous …
metalorganic chemical vapor deposition (MOCVD) technique and compared with analogous …
MOVPE and photoluminescence of narrow band gap (0.77 eV) InN on GaN/sapphire by pulsed growth mode
This paper reports the metalorganic vapor phase epitaxy (MOVPE) of InN on GaN/sapphire
templates by pulsed growth mode. Photoluminescence analysis of the films has been …
templates by pulsed growth mode. Photoluminescence analysis of the films has been …