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Advances in wide bandgap materials for semiconductor spintronics
SJ Pearton, CR Abernathy, DP Norton… - Materials Science and …, 2003 - Elsevier
Existing semiconductor electronic and photonic devices utilize the charge on electrons and
holes in order to perform their specific functionality such as signal processing or light …
holes in order to perform their specific functionality such as signal processing or light …
Ferromagnetic nitride-based semiconductors doped with transition metals and rare earths
A Bonanni - Semiconductor Science and Technology, 2007 - iopscience.iop.org
This review summarizes the state-of-the-art in the search for room temperature
ferromagnetic semiconductors based on transition-metal-and rare-earth-doped nitrides. The …
ferromagnetic semiconductors based on transition-metal-and rare-earth-doped nitrides. The …
Temperature-dependent magnetization in diluted magnetic semiconductors
We calculate magnetization in magnetically doped semiconductors assuming a local
exchange model of carrier-mediated ferromagnetic mechanism and using a number of …
exchange model of carrier-mediated ferromagnetic mechanism and using a number of …
Impurity-ion pair induced high-temperature ferromagnetism in Co-doped ZnO
CD Pemmaraju, R Hanafin, T Archer, HB Braun… - Physical Review B …, 2008 - APS
Magnetic 3 d ions doped into wide-gap oxides show signatures of room-temperature
ferromagnetism, although their concentration is two orders of magnitude smaller than that in …
ferromagnetism, although their concentration is two orders of magnitude smaller than that in …
Disordered RKKY Lattice Mean Field Theory for Ferromagnetism<? format?> in Diluted Magnetic Semiconductors
DJ Priour Jr, EH Hwang, S Das Sarma - Physical review letters, 2004 - APS
We develop a lattice mean field theory for ferromagnetic ordering in diluted magnetic
semiconductors by taking into account the spatial fluctuations associated with random …
semiconductors by taking into account the spatial fluctuations associated with random …
Mn-doped InAs self-organized diluted magnetic quantum-dot layers with Curie temperatures above 300K
M Holub, S Chakrabarti, S Fathpour… - Applied Physics …, 2004 - pubs.aip.org
The magnetic and structural properties of InAs: Mn self-organized diluted magnetic quantum
dots grown by low-temperature (∼ 270 C), solid-source molecular-beam epitaxy using a …
dots grown by low-temperature (∼ 270 C), solid-source molecular-beam epitaxy using a …
Model of localized state mediated exchange interaction and ferromagnetism in diluted magnetic semiconductors
IA Kokurin, NS Averkiev - Physical Review B, 2024 - APS
The real mechanism of ferromagnetism in diluted magnetic semiconductors (DMSs), in
particular in GaMnAs, is not yet fully understood. The well-known Ruderman-Kittel-Kasuya …
particular in GaMnAs, is not yet fully understood. The well-known Ruderman-Kittel-Kasuya …
Influence of defects on the lattice constant of GaMnAs
J Sadowski, JZ Domagala - Physical Review B, 2004 - APS
We study the influence of the major compensating defects As antisites and Mn interstitials
known to occur in the GaMnAs ferromagnetic semiconductor on its structural properties. Our …
known to occur in the GaMnAs ferromagnetic semiconductor on its structural properties. Our …
Structural and magnetic properties of Mn-doped CuO thin films
H Zhu, F Zhao, L Pan, Y Zhang, C Fan… - Journal of applied …, 2007 - pubs.aip.org
Highly (111) oriented Mn (6.6%–29.8%) doped CuO thin films have been fabricated on
thermally oxidized silicon substrate by radio-frequency magnetron sputtering. X-ray …
thermally oxidized silicon substrate by radio-frequency magnetron sputtering. X-ray …
Mean-field approach to ferromagnetism in (III, Mn) V diluted magnetic semiconductors at low carrier densities
M Berciu, RN Bhatt - Physical Review B, 2004 - APS
We present a detailed study, within the mean-field approximation, of an impurity band model
for III-V diluted magnetic semiconductors. Such a model should be relevant at low carrier …
for III-V diluted magnetic semiconductors. Such a model should be relevant at low carrier …