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Assessment of active dopants and p–n junction abruptness using in situ biased 4D-STEM
A key issue in the development of high-performance semiconductor devices is the ability to
properly measure active dopants at the nanometer scale. In ap–n junction, the abruptness of …
properly measure active dopants at the nanometer scale. In ap–n junction, the abruptness of …
[HTML][HTML] Measuring electrical properties in semiconductor devices by pixelated STEM and off-axis electron holography (or convergent beams vs. plane waves).
We demonstrate the use of both pixelated differential phase contrast (DPC) scanning
transmission electron microscopy (STEM) and off-axis electron holography (EH) for the …
transmission electron microscopy (STEM) and off-axis electron holography (EH) for the …
Quantitative electric field map** in semiconductor heterostructures via tilt-scan averaged DPC STEM
Differential phase contrast (DPC) in scanning transmission electron microscopy can be used
to visualize electric field distributions within specimens in real space. However, for electric …
to visualize electric field distributions within specimens in real space. However, for electric …
Revealing the origin of single‐atom W activity in H2O2 electrocatalytic production: Charge symmetry‐breaking
C **g, J Ding, P Jia, M **, L Zhou, X Liu, J Luo… - Carbon …, 2024 - Wiley Online Library
The low‐energy electrochemical production of hydrogen peroxide (H2O2) has garnered
significant attention as a viable alternative to traditional industrial routes, with the goal of …
significant attention as a viable alternative to traditional industrial routes, with the goal of …
Suppressing dynamical diffraction artefacts in differential phase contrast scanning transmission electron microscopy of long-range electromagnetic fields via …
It is well known that dynamical diffraction varies with changes in sample thickness and local
crystal orientation (due to sample bending). In differential phase contrast scanning …
crystal orientation (due to sample bending). In differential phase contrast scanning …
Measuring Spatially‐Resolved Potential Drops at Semiconductor Hetero‐Interfaces Using 4D‐STEM
Characterizing long‐range electric fields and built‐in potentials in functional materials at
nano to micrometer scales is of supreme importance for optimizing devices, eg, the …
nano to micrometer scales is of supreme importance for optimizing devices, eg, the …
Toward quantitative electromagnetic field imaging by differential-phase-contrast scanning transmission electron microscopy
Differential-phase-contrast scanning transmission electron microscopy (DPC STEM) is a
technique to directly visualize local electromagnetic field distribution inside materials and …
technique to directly visualize local electromagnetic field distribution inside materials and …
Improved measurement of electric fields by nanobeam precession electron diffraction
L Bruas, V Boureau, AP Conlan, S Martinie… - Journal of Applied …, 2020 - pubs.aip.org
The electric field in a silicon p–n junction has been measured using pixelated scanning
transmission electron microscopy. By using a convergence angle of 3.2 mrad, a spatial …
transmission electron microscopy. By using a convergence angle of 3.2 mrad, a spatial …
Interpretable and efficient interferometric contrast in scanning transmission electron microscopy with a diffraction-grating beam splitter
Efficient imaging of biomolecules, two-dimensional materials, and electromagnetic fields
depends on retrieval of the phase of transmitted electrons. We demonstrate a method to …
depends on retrieval of the phase of transmitted electrons. We demonstrate a method to …
High-sensitivity map** of magnetic induction fields with nanometer-scale resolution: comparison of off-axis electron holography and pixelated differential phase …
We compare two transmission electron microscopy (TEM) based techniques that can
provide highly spatially resolved quantitative measurements of magnetic induction fields at …
provide highly spatially resolved quantitative measurements of magnetic induction fields at …